主要对n型IBC太阳电池结构的发射极硼掺杂工艺进行优化设计,并通过ENDA2模拟软件对实验结果进行验证分析,通过复合损失分析,研究不同发射极硼扩工艺对产业化IBC太阳电池电性能的影响。实验结果表明,采用较高推进温度的硼扩散工艺,获得发射极方阻98 Ω/sq,该发射极具有最低的表面浓度1.68×1019 cm-3和最深结深0.88 μm,使得电池具有最低的复合损失（J0,pass=24 fA/cm2）。在25 ℃下,AM 1.5的标准I-V测试条件下,采用最优硼扩散条件制作的IBC太阳电池,其最高电池转化效率为23.4%（Voc=688.4 mV,Jsc=41.99 mA/cm2,FF=80.9%）。进一步地,通过数值模拟的方法对该电池各部分功率损失进行分析,可为下一步电池效率的提升提供优化方向。
Abstract
In this paper, the emitter boron doping process is optimized for n-type IBC silicon wafer solar cell, and the experimental results are verified and analyzed by ENDA2 simulation software. The influence of different emitter boron diffusion processes on the performance of industrial IBC solar cell is investigated by the recombination loss analysis. The results show that the sheet resistance of 98 Ω/sq can be realized with higher drive-in temperature during boron diffusion process, which exhibits the lowest surface concentration of 1.68×1019 cm-3 and the deepest p-n junction depth of 0.88 μm, and results in the lowest recombination loss （J0,pass=24 fA/cm2） of the solar cells. Under 25 ℃, the AM 1.5 standard test conditions, the maximum efficiency of 23.4%（Voc=688.4 mV, Jsc=41.99 mA/cm2, FF=80.9%） is achieved for IBC solar cell with optimized boron diffusion process. Further, the power loss of each component of the champion cell is analyzed by numerical simulation, paving a new way for efficiency optimization in terms of the industrial IBC solar cell.
关键词
太阳电池 /
热扩散 /
数值模拟 /
IBC /
转换效率 /
产业化
Key words
solar cells /
thermal diffusion /
numerical simulation /
IBC /
conversion efficiency /
industrialization
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