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ISSN 0254-0096 CN 11-2082/K

太阳能学报 ›› 2022, Vol. 43 ›› Issue (7): 140-144.DOI: 10.19912/j.0254-0096.tynxb.2020-1113

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氢等离子体处理钝化层对高效晶硅异质结太阳电池性能的影响

刘欢1,2, 由甲川1,2, 赵雷1~3, 王文静1~3, 曲铭浩4, 徐希翔4   

  1. 1.中国科学院太阳能热利用及光伏系统重点实验室,中国科学院电工研究所,北京 100190;
    2.中国科学院大学,北京 100049;
    3.洁净能源国家实验室,大连 116023;
    4.汉能薄膜发电集团成都研发中心,成都 610200
  • 收稿日期:2020-10-20 出版日期:2022-07-28 发布日期:2023-01-28
  • 通讯作者: 赵 雷(1979—),男,博士、研究员,主要从事硅基太阳电池方面的研究。zhaolei@mail.iee.ac.cn
  • 基金资助:
    国家自然科学基金面上项目(61674151); 中国科学院战略性先导科技专项A类项目课题(XDA21060500)

EFFECT OF POST-DEPOSITION HYDROGEN PLASMA TREATMENT TO PASSIVATION LAYER ON PERFORMANCE OF SILICON HETEROJUNCTION SOLAR CELL

Liu Huan1,2, You Jiachuan1,2, Zhao Lei1~3, Wang Wenjing1~3, Qu Minghao4, Xu Xixiang4   

  1. 1. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China;
    3. Dalian National Laboratory for Clean Energy, Dalian 116023, China;
    4. Chengdu R&D Center, Hanergy Thin Film Power Group, Ltd., Chengdu 610200, China
  • Received:2020-10-20 Online:2022-07-28 Published:2023-01-28

摘要: 研究不同时间氢等离子体处理(HPT)氢化非晶硅a-Si:H(i)钝化层对高效晶硅异质结太阳电池(效率>23%)性能的影响。发现适当时间的HPT可改善钝化效果提升电池性能,但过长时间的HPT可导致薄膜钝化效果变差,有效少数载流子寿命降低。分析认为HPT时间过长,H原子进入到a-Si:H(i)薄膜层中,导致薄膜内部SiH2增多,微结构因子(R)增大,薄膜质量变差。并且,适当时间的HPT改善太阳电池性能的幅度有限,而过长时间的HPT导致电池性能下降却很明显。因此,针对高效率的晶硅异质结太阳电池,应对钝化层沉积之后的HPT工艺进行谨慎控制。

关键词: 晶硅异质结, 太阳电池, PECVD, 氢等离子体处理, 钝化

Abstract: The effect of post-deposition hydrogen plasma treatment (HPT) to the intrinsic hydrogenated amorphous silicon (a-Si:H(i)) passivation layer on the performance of the silicon heterojunction (SHJ) solar cell with high efficiency (>23%) was investigated. It was found that HPT with an appropriate time could improve the passivation effect slightly and thus increase the solar cell efficiency. However, HPT with an over-long time obviously made the passivation effect deteriorate and the effective minority carrier lifetime (τeff) decrease. The analysis demonstrated that with the increase of HPT time, more and more hydrogen atoms entered the a-Si:H(i) layer, resulting in the SiH2 amount increase in the layer. The microstructure factor (R) of the layer increased and the layer quality became poor. The results indicated that the HPT process should be controlled carefully when the original solar cell efficiency was high since the solar cell performance improvement from HPT was limited in such a case.

Key words: silicon heterojunction, solar cells, PECVD, hydrogen plasma treatment, passivation

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