针对光伏并网逆变器中的串扰问题,提出一种考虑寄生电感影响的非开尔文封装SiC MOSFET串扰峰值预测算法。以TO-247-3封装SiC MOSFET构成的半桥电路为研究对象,首先分析各个阶段的串扰电压数学模型,并推导串扰电压的微分表达式;其次提出串扰峰值的预测算法,建立预测峰值所需参数的数学模型;最后搭建实验平台,验证理论的正确性和算法的有效性,为设计光伏并网逆变器的驱动和保护电路提供参考依据。
Abstract
Aiming at the crosstalk problem in photovoltaic grid-connected inverter, a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed. The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied. Firstly, the mathematical model of crosstalk voltages in each stage are analyzed, and the differential expressions of crosstalk voltage are derived; Secondly, the prediction algorithm of crosstalk peak is proposed, and the mathematical models of the parameters required to predict the crosstalk peak are established; Finally, an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.
关键词
碳化硅 /
MOSFET /
串扰 /
并网逆变器 /
寄生电感 /
半桥电路
Key words
silicon carbide /
MOSFET /
crosstalk /
grid-connected inverter /
parasitic inductance /
half-bridge circuit
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基金
天津市技术创新引导专项基金（20YDTPJC00510）
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