计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

doi:10.19912/j.0254-0096.tynxb.2021-1124

太阳能学报 ›› 2023, Vol. 44 ›› Issue (2): 445-452.DOI: 10.19912/j.0254-0096.tynxb.2021-1124

计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

杜明星¹, 信金蕾¹, 姚婉荣², 欧阳紫威^1,3

1.天津市复杂系统控制理论及应用重点实验室（天津理工大学）,天津 300384;
2.天津中科华盈科技有限公司,天津 300300;
3.丹麦技术大学电气工程系,灵比 2800 Kgs

收稿日期:2021-09-15 出版日期:2023-02-28 发布日期:2023-08-28
通讯作者: 杜明星（1980—）,男,博士、教授,主要从事功率变换器可靠性、EMC等方面的研究。dumx@tjut.edu.cn
基金资助:
天津市技术创新引导专项（基金）（20YDTPJC00510）

ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT

Du Mingxing¹, Xin Jinlei¹, Yao Wanrong², Ouyang Ziwei^1,3

1. Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China;
2. Tianjin Zhongke Huaying Technology Co., Ltd., Tianjin 300300, China;
3. Department of Electrical Engineering, Technical University of Denmark, Lyngby 2800 Kgs, Denmark

Received:2021-09-15 Online:2023-02-28 Published:2023-08-28

摘要/Abstract

摘要： 在研究SiC MOSFET的阈值电压、体二极管电压、漏-源极通态电阻温度依赖性的基础上,分析偏压温度不稳定性（BTI）引起的VTH的漂移规律,并探究其对温敏电参数（TSEPs）的影响规律。另外,在充分考虑温度和BTI对VTH共同作用的影响下,提出在小电流注入时使用体效应下的体二极管电压监测SiC MOSFET阈值电压的方法。该方法可在不同的结温（Tj）下监测阈值电压,为校正其他TSEPs测量结温的准确性提供帮助。理论和实验结果证明了该方法的可行性。

关键词: 碳化硅, 功率MOSFET, 状态监测, 温敏电参数, 偏压温度不稳定性

Abstract: This paper studies the temperature dependence of threshold voltage, body diode voltage, drain-source on-state resistance in SiC MOSFET, analyzes the effect of bias temperature instability（BTI） on VTH, and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition, considering the influence of temperature and BTI on VTH, a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures （Tj） and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.

Key words: silicon carbide, power MOSFET, condition monitoring, temperature-sensitive electrical parameters, bias temperature instability

中图分类号:

TM46

杜明星, 信金蕾, 姚婉荣, 欧阳紫威. 计及热电耦合效应的SiC MOSFET阈值电压精确监测方法[J]. 太阳能学报, 2023, 44(2): 445-452.

Du Mingxing, Xin Jinlei, Yao Wanrong, Ouyang Ziwei. ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT[J]. Acta Energiae Solaris Sinica, 2023, 44(2): 445-452.

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计及热电耦合效应的SiC MOSFET阈值电压精确监测方法

ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT

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