采用Scheil方程和四探针法、霍尔效应技术、紫外-可见光吸收光谱以及XRD技术分别模拟和测试太阳能硅锭的杂质分布、电阻率、载流子浓度、带隙以及晶体结构,结果表明：若硅料中施主杂质原子浓度小于受主杂质的0.39倍,铸造的p型硅锭不会出现极性反转。由于极性相反杂质间的抵偿效应,在硅锭极性反转处形成p-n结区,少子寿命和体电阻率均达到最大值,且硅锭的晶体结构未发生改变,带隙比特征硅锭的带隙降低25.89%,对此段硅锭切片,可省略后续硅片的“磷扩散”过程。利用掺杂剂抵偿技术可制备高效率和低成本的晶硅太阳电池。
Abstract
The Scheil equation, four-probe method, Hall effect technology, ultraviolet-visible light absorption spectroscopy, and XRD technique are employed to simulate and test the impurity distribution, resistivity, carrier concentration, band gap and crystal structure of solar-grade silicon ingot, respectively. The results show that if the atomic concentration of the donor impurity in silicon material is less than 0.39 times that of the acceptor impurity, the casted p-type silicon ingots do not occur the polarity inversion. Due to the compensation effect between the impurities of opposite polarity, the p-n junction region in which both the minority carrier lifetime and bulk resistivity reach the maximum value, is formed in the polarity inversion region of the silicon ingot. Meanwhile, the crystal structure of the ingot does not be changed, and the band gap is decreased by 25.89% compared with the characteristic silicon ingot. For the polarity inversion region of silicon ingot, subsequent “phosphorus diffusion”process of the as-cut silicon wafers can be omitted. Employing the techniques of dopant compensation can fabricate high efficiency and low-cost silicon solar cells.
关键词
太阳电池 /
载流子迁移率 /
少子寿命 /
抵偿效应 /
Scheil方程 /
太阳能级硅
Key words
solar cells /
carrier mobility /
minority carrier lifetime /
compensation effect /
Scheil equation /
solar-grade silicon
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基金
国家自然科学基金（118040055）; 河南省高校重点科研计划项目（20A480001）; 安阳市科技计划项目（2021C01GX008）
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