为研究太阳电池光电参数由低能质子辐照产生的辐射损伤机制,对In0.53Ga0.47As单结太阳电池开展100 keV 质子辐照及退火试验研究,分析太阳电池电参数和光谱响应在辐照及退火前后的变化规律,结合SRIM仿真计算结果对辐照引起的位移损伤进行讨论。结果表明,当质子辐照累积注量为5×1012 p/cm2时,In0.53Ga0.47As单结太阳电池的短路电流、开路电压和最大输出功率分别衰减到其初始值的88.8%、88.3%、72.3%;太阳电池光谱响应在短波区的衰减比长波区更严重。SRIM仿真结果表明,上述结果是由于100 keV的质子能量沉积在In0.53Ga0.47As单结太阳电池发射区和基区顶部而产生位移损伤缺陷导致的。对辐照后的太阳电池样品进行150 ℃退火处理,太阳电池电学参数因辐射感生缺陷的湮灭而产生了不同程度的恢复。
Abstract
In order to study the radiation damage mechanism of solar cell photoelectric parameters caused by low-energy proton irradiation, 100 keV proton irradiation and annealing experiments were carried out for In0.53Ga0.47As single junction cells. The variation laws of solar cell electrical parameters and spectral response before and after irradiation and annealing were analyzed. Based on the SRIM simulation results, the displacement damage caused by irradiation was discussed. The results shows that when the proton irradiation cumulative fluence up to 5 ×1012 p/cm2, the short-circuit current, open circuit voltage and maximum output power of In0.53Ga0.47As cell degraded to 88.8%, 88.3% and 72.3% respectively; The attenuation of solar cell spectral response in short wave region is more serious than that in long wave region. SRIM simulation results shows that these are caused by displacement damage defects due to the deposition of 100 keV proton energy on the emission region and top of the base region of In0.53Ga0.47As cell. The irradiated samples were annealed at 150 ℃, and the electrical parameters of samples were restored due to the annihilation of radiation-induced defects.
关键词
太阳电池效率 /
质子辐照 /
辐射损伤 /
量子效率
Key words
solar cells /
proton irradiation /
radiation damage /
quantum efficiency
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基金
新疆电子信息材料与器件重点实验室资助项目（2021D04012）; 国家自然科学基金（61534008）
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