该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧（nc-SiOx:H）薄膜,应用于晶硅异质结（SHJ）太阳电池的窗口层以替代传统的氢化非晶硅（a-Si:H）薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 mA/cm2,达到38.5 mA/cm2,填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-SiOx:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅（nc-Si:H）种子层,可改善nc-SiOx:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-SiOx:H窗口层的电池相比,nc-Si:H/nc-SiOx:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。
Abstract
In this work, the highly conductive, highly transparent phosphorus-doped hydrogenated nanocrystalline silicon oxide （nc-SiOx:H） film is prepared, which is successfully applied as the window layer of silicon heterojunction （SHJ） cells to replace the traditional hydrogenated amorphous silicon （a-Si:H） film. Compared with the cell with a-Si:H thin film as the window layer, the short-circuit current density can be increased by 0.5 mA/cm2 to 38.5 mA/cm2, the fill factor is 82.7%, and the efficiency is 23.5%. In addition, the intrinsic amorphous silicon layer was surface treated before nc-SiOx:H film deposition. The deposition of 1 nm nanocrystalline silicon seed layer can improve the crystallinity of nc-SiOx:H film and reduce the content of amorphous phase in the film. Compared with the fill factor of the cell with nc-SiOx:H film, the fill factor of the cell with nc-Si:H/ nc-SiOx:H stacked thin films is increased to 83.4%, and the efficiency increased by 0.3% to 23.8%.
关键词
纳米晶材料 /
太阳电池 /
薄膜生长 /
晶硅异质结太阳电池 /
纳米晶硅氧（nc-SiOx:H） /
界面处理
Key words
nanocrystalline materials /
solar cells /
film growth /
silicon heterojunction solar cells /
hydrogenated nanocrystalline silicon oxide （nc-SiOx:H） /
interface treatment
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基金
国家自然科学基金（62004208）; 国家自然科学基金（62074153）; 中国科学院“鸿鹄专项”（XDA17020403）; 上海市科技创新行动（22ZR1473200）
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