硅异质结太阳电池的TiCxOy电子选择性接触研究

孙彪; 丁阳; 黄志平; 陈静伟; 韦德远; 许颖

doi:10.19912/j.0254-0096.tynxb.2022-0299

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太阳能学报 ›› 2023, Vol. 44 ›› Issue (7) : 141-146. DOI: 10.19912/j.0254-0096.tynxb.2022-0299

硅异质结太阳电池的TiC_xO_y电子选择性接触研究

孙彪¹, 丁阳¹, 黄志平^1,2, 陈静伟¹, 韦德远³, 许颖¹

作者信息 +

RESEARCH ON TiC_xO_y ELECTRON-SELETIVE CONTACTS FOR SILLICON HETROJUCTION SOLAR CELLS

Sun Biao¹, Ding Yang¹, Huang Zhiping^1,2, Chen Jingwei¹, Wei Deyuan³, Xu Ying¹

Author information +

文章历史 +

摘要

报道一种新型的免掺杂电子传输材料——TiC_xO_y,具有非晶相为主少量晶化相的混合相结构,约4.1 eV的低功函数和2.63 eV的宽带隙,可实现对电子的零势垒传输和对空穴的高势垒（1.64 eV）阻挡;TiC_xO_y/n型硅异质接触可获得17.74 mΩ·cm²的低接触电阻率,可实现对电子的选择性输运功能。TiC_xO_y薄膜用作全背面n型硅异质结电池的电子传输层,可大幅提高电池的开路电压和填充因子,最优电池的绝对效率提高3%。

Abstract

This article reports TiC_xO_y as a novel dopant-free electron-transport material. TiC_xO_y is a mixed-phase material which is composed of the dominant amorphous phase and a small proportion of crystalline phase. TiC_xO_y material has a low work function of about 4.1 eV and a wide bandgap of 2.63 eV, realizing 0 eV energy barrier for electrons transport and high blocking energy barrier of 1.64 eV for holes transport. A low contract resistivity of 17.74 mΩ·cm² has been realized for TiC_xO_y/n-Si heterocontact, realizing the function of electron-selective transport. TiC_xO_y thin film was applied for the full-area, rear-side electron-transport layer of n-type silicon heterojunction solar cell. As a result, the introduction of TiC_xO_y thin film significantly increases open-circuit voltages and fill factors of solar cells, and the absolute conversation efficiency of champion solar cell is promoted by 3%.

导出引用

孙彪, 丁阳, 黄志平, 陈静伟, 韦德远, 许颖. 硅异质结太阳电池的TiC_xO_y电子选择性接触研究[J]. 太阳能学报. 2023, 44(7): 141-146 https://doi.org/10.19912/j.0254-0096.tynxb.2022-0299

Sun Biao, Ding Yang, Huang Zhiping, Chen Jingwei, Wei Deyuan, Xu Ying. RESEARCH ON TiC_xO_y ELECTRON-SELETIVE CONTACTS FOR SILLICON HETROJUCTION SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2023, 44(7): 141-146 https://doi.org/10.19912/j.0254-0096.tynxb.2022-0299

中图分类号： TM615

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