为获得铜铟镓硒薄膜太阳电池中高质量Zn（O,S）无镉缓冲层薄膜,该研究阐述了柠檬酸三钠作为络合剂制备Zn（O,S）薄膜的成膜机理,系统性研究了该体系下各反应参数对薄膜化学水浴沉积的影响。研究表明,柠檬酸三钠的浓度值显著影响反应类型,异质反应更有利于生成高质量薄膜。同时,柠檬酸三钠与金属离子浓度的比值直接影响成膜质量和成膜速率,适合的pH溶液环境有助于提高Zn（O,S）薄膜沉积的质量。此外,通过工艺参数的优化,获得了电学性能接近传统CdS/CIGS太阳电池的Zn（O,S）/CIGS电池器件。
Abstract
In order to obtain high-quality Zn（O,S） cadmium-free buffer layers in Cu（In,Ga）Se2 thin film solar cells, the deposition mechanism of Zn（O,S） films prepared by trisodium citrate as a complexing agent was expounded, and the effects of reaction parameters on the chemical bath deposition were systematically investigated. The results show that the concentration of trisodium citrate significantly affects the type of reaction, and heterogeneous reaction is more conducive to the deposition of high-quality films. Besides that, the ratio of trisodium citrate to metal ion concentration directly affects the deposition quality and the deposition rate. A suitable pH solution environment helps to improve the quality of Zn（O,S） thin film. Furthermore, the device efficiency of Zn（O,S）/CIGS solar cells is close to that of traditional CdS/CIGS solar cells through the optimization of process parameters.
关键词
薄膜太阳电池 /
缓冲层 /
络合 /
CIGS /
柠檬酸三钠 /
Zn(O /
S) /
化学水浴沉积
Key words
thin film solar cells /
buffer layer /
complexation /
CIGS /
trisodium citrate /
Zn（O /
S） /
chemical bath deposition
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基金
国家重点研发计划（2018YFB1500200）
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