以二合一管式PECVD背钝化镀膜工艺过程中出现的石墨舟空心卡点EL发黑品质异常为研究对象,分析讨论二合一管式PECVD背钝化工艺中射频功率、工艺温度、氧化铝沉积厚度等对晶硅太阳电池空心卡点EL发黑品质异常的影响。结果表明,在二合一管式PECVD背钝化工艺时采用12~16 nm厚度的氧化铝薄膜、350~370 ℃的预淀积工艺温度,能有效解决镀膜空心卡点EL发黑品质异常,显著提升晶硅太阳电池在二合一管式PECVD的镀膜品质。
Abstract
In this paper, the abnormal EL blackening quality of graphite boat hollow stuck point occurred in the process of two-in-one tube PECVD back passivation coating was studied. The influences of RF power, process temperature and Al2O3 deposition thickness on the abnormal blackening quality of hollow stuck point EL of crystalline silicon solar cells in two-in-one tube PECVD back passivation process were analyzed and discussed. The results show that, in two-in-one tube PECVD back passivation process, when an aluminum oxide film with a thickness of 12-16 nm and a pre-deposition process temperature of 350-370 ℃ are used， it can effectively improve and solve that abnormal black quality of the EL of the hollow stuck point of the coating can be improved effectively, the coating quality of crystalline silicon solar cells in two-in-one tube PECVD is significantly elevated.
关键词
太阳电池 /
EL发黑 /
背钝化 /
预淀积 /
二合一管式PECVD /
卡点钝化缺陷
Key words
solar cell /
EL black； dorsal passivation /
predeposition；two-in-one tubular PECVD /
stuck point passivation defect
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