该文提出一种基于电磁辐射干扰（EMR）与VeE_peak组合电参数监测IGBT模块封装老化的方法,旨在监测多种老化同时发生时IGBT模块的健康状态。首先,分析VeE_peak和EMR的产生机理以及模块内部寄生参数对VeE和EMR的影响;其次,分析不同老化对IGBT模块内部寄生参数的影响;最后,结合实验结果证明所提方法的正确性。这是一种不需要复杂监测电路的非侵入式监测方法,可有效降低多种老化耦合对IGBT模块健康状态监测结果产生的误差。
Abstract
A method is proposed for the packaging aging of IGBT modules to be monitored, based on the combination of EMR and VeE_peak electrical parameters, with the aim of the health status of IGBT modules being monitored when multiple aging events occur simultaneously. Firstly, the generation mechanism of VeE_peak and radiated interference signal （EMR） and the influence of parasitic parameters inside the module on VeE and EMR were analyzed. Secondly, the impact of bond wire lift-off and solder layer voids on the internal parasitic parameters of IGBT modules is analyzed. Finally, the feasibility of this method was verified through experiments. This is a non-invasive monitoring method that does not require complex monitoring circuits, which can effectively reduce the errors caused by various aging coupling on the health status monitoring results of IGBT modules.
关键词
焊料层空洞 /
IGBT模块 /
键合线老化 /
电磁辐射干扰 /
VeE_peak
Key words
solder layer void /
IGBT module /
bonding wires aging /
electromagnetic radiation interference /
VeE_peak
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基金
天津市技术创新引导专项基金（20YDTPJC00510）
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