优化IGBT开关性能的自适应变电阻有源驱动电路研究

周家民, 黄连生, 陈晓娇, 窦盛, 何诗英, 张秀青

太阳能学报 ›› 2024, Vol. 45 ›› Issue (12) : 132-138.

PDF(1585 KB)
欢迎访问《太阳能学报》官方网站,今天是
PDF(1585 KB)
太阳能学报 ›› 2024, Vol. 45 ›› Issue (12) : 132-138. DOI: 10.19912/j.0254-0096.tynxb.2023-1300

优化IGBT开关性能的自适应变电阻有源驱动电路研究

  • 周家民1, 黄连生2, 陈晓娇2, 窦盛3, 何诗英2, 张秀青2
作者信息 +

RESEARCH ON ADAPTIVE VARIABLE RESISTANCE ACTIVE DRIVE CIRCUIT FOR OPTIMIZING IGBT SWITCHING PERFORMANCE

  • Zhou Jiamin1, Huang Liansheng2, Chen Xiaojiao2, Dou Sheng3, He Shiying2, Zhang Xiuqing2
Author information +
文章历史 +

摘要

针对IGBT开通过程中的电流及电压振荡提出一种新型自适应IGBT有源栅极驱动电路(NAAGD)。该电路结合互补IGBT的电压电流信息进行开通驱动电阻的投切控制,可实现开通过程电流及电压振荡的抑制,且可自适应电压电流等级的变化。与现有有源驱动电路(AGD)方案相比,NAAGD的自适应响应具有更好的即时性;同时,相比传统驱动电路(CGD)增大驱动电阻抑制振荡的方法,可优化开通损耗。最后通过实验验证所提NAAGD的有效性。

Abstract

A novel adaptive active gate driving circuit (NAAGD) is proposed for current and voltage oscillations during IGBT turn-on. The circuit combines the voltage and current information of the complementary IGBT to switch on the drive resistor, which can realize the suppression of the open-pass current and voltage oscillation, and can adapt to the change of voltage and current level. Compared with the existing Active Gate Drive (AGD) scheme, the adaptive response of NAAGD has better immediacy. At the same time, compared with the conventional Gate Drive (CGD), the method of increasing the drive resistance to suppress oscillation is optimized, and the turn-on loss is optimized. Experiments verify the effectiveness of the proposed NAAGD.

关键词

绝缘栅双极型晶体管 / 自适应 / 损耗 / 有源栅极驱动 / 振荡

Key words

insulated gate bipolar transistor (IGBT) / adaptive / loss / active gate drive (AGD) / oscillation

引用本文

导出引用
周家民, 黄连生, 陈晓娇, 窦盛, 何诗英, 张秀青. 优化IGBT开关性能的自适应变电阻有源驱动电路研究[J]. 太阳能学报. 2024, 45(12): 132-138 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1300
Zhou Jiamin, Huang Liansheng, Chen Xiaojiao, Dou Sheng, He Shiying, Zhang Xiuqing. RESEARCH ON ADAPTIVE VARIABLE RESISTANCE ACTIVE DRIVE CIRCUIT FOR OPTIMIZING IGBT SWITCHING PERFORMANCE[J]. Acta Energiae Solaris Sinica. 2024, 45(12): 132-138 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1300
中图分类号: TM46   

参考文献

[1] 孙孝峰, 申彦峰, 霍庆颖. PWM加双移相控制双向Buck-Boost集成三端口DC-DC变换器[J]. 太阳能学报, 2016, 37(5): 1180-1189.
SUN X F, SHEN Y F, HUO Q Y.Bidirectional Buck-Boost integrated three-port DC-DC converter with PWM plus dual phase shift control[J]. Acta energiae solaris sinica, 2016, 37(5): 1180-1189.
[2] 孙志宇, 马铭遥, 初开麒, 等. 基于LabVIEW的三电平逆变器IGBT模块键合线监测系统[J]. 太阳能学报, 2020, 41(7): 165-172.
SUN Z Y, MA M Y, CHU K Q, et al.Wire bonding monitoring system based on LabVIEW for three-level inverter IGBT modules[J]. Acta energiae solaris sinica, 2020, 41(7): 165-172.
[3] 李先允, 卢乙, 倪喜军, 等. 改善SiC MOSFET开关性能的变电压有源驱动电路研究[J]. 太阳能学报, 2022, 43(1): 362-368.
LI X Y, LU Y, NI X J, et al.Research on variable-voltage active drive circuit for improving SiC MOSFET switching performance[J]. Acta energiae solaris sinica, 2022, 43(1): 362-368.
[4] NOPPAKUNKAJORN J, HAN D, SARLIOGLU B.Analysis of high-speed PCB with SiC devices by investigating turn-off overvoltage and interconnection inductance influence[J]. IEEE transactions on transportation electrification, 2015, 1(2): 118-125.
[5] 黄先进, 蒋晓春, 叶斌, 等. 智能化IGBT驱动电路研究[J]. 电工技术学报, 2005, 20(4): 89-93.
HUANG X J, JIANG X C, YE B, et al.Research on intelligent IGBT drive circuit[J]. Transactions of China Electrotechnical Society, 2005, 20(4): 89-93.
[6] FU J Z, ZHANG Z L, LIU Y F, et al.A new high efficiency current source driver with bipolar gate voltage[J]. IEEE transactions on power electronics, 2012, 27(2): 985-997.
[7] 袁义生, 邱志卓, 钟青峰, 等. 逆变器开关管变驱动电流技术研究[J]. 电源学报, 2019, 17(3): 133-139.
YUAN Y S, QIU Z Z, ZHONG Q F, et al.Research on changeable driving-current technology of switches for inverters[J]. Journal of power supply, 2019, 17(3): 133-139.
[8] 朱义诚, 赵争鸣, 施博辰, 等. 绝缘栅型功率开关器件栅极驱动主动控制技术综述[J]. 高电压技术, 2019, 45(7): 2082-2092.
ZHU Y C, ZHAO Z M, SHI B C, et al.Review of active gate control methods for insulated-gate power switching devices[J]. High voltage engineering, 2019, 45(7): 2082-2092.
[9] ZHANG F, YANG X, REN Y, et al.Advanced active gate drive for switching performance improvement and overvoltage protection of high-power IGBTs[J]. IEEE transactions on power electronics, 2018, 33(5): 3802-3815.
[10] CHENG Y S, MANNEN T, WADA K, et al.Optimization platform to find a switching pattern of digital active gate drive for reducing both switching loss and surge voltage[J]. IEEE transactions on industry applications, 2019, 55(5): 5023-5031.
[11] HENN J, LÜDECKE C, LAUMEN M, et al. Intelligent gate drivers for future power converters[J]. IEEE transactions on power electronics, 2022, 37(3): 3484-3503.
[12] 毛鹏, 谢少军, 许泽刚. IGBT模块的开关暂态模型及损耗分析[J]. 中国电机工程学报, 2010, 30(15): 40-47.
MAO P, XIE S J, XU Z G.Switching transients model and loss analysis of IGBT module[J]. Proceedings of the CSEE, 2010, 30(15): 40-47.
[13] 谢海超, 王学梅. 一种用于改善 IGBT 开关过冲的主动栅极控制技术[J]. 电源学报, 2022, 22(4): 280-291.
XIE H C, WANG X M.An active gate control method for improving switching overshoots of IGBTs[J]. Journal of power supply, 2022, 22(4): 280-291.
[14] 王亮亮, 杨媛, 刘海锋, 等. 一种大功率IGBT软开关驱动电路[J]. 电力电子技术, 2015, 49(7): 79-82.
WANG L L, YANG Y, LIU H F, et al.A soft switching driver circuit for high-power IGBT[J]. Power electronics, 2015, 49(7): 79-82.
[15] BAYERER R.Parasitic inductance hindering utilization of power devices[C]//CIPS 2016, 9th International Conference on Integrated Power Electronics Systems. Nuremberg, Germany, 2016: 1-8.

基金

国家自然科学基金(52207034); 安徽省科技重大专项(202003a05020019)

PDF(1585 KB)

Accesses

Citation

Detail

段落导航
相关文章

/