基于Si IGBT与SiC FET并联的新型混合器件特性解析及对比研究

朱梓贤; 涂春鸣; 肖标; 郭祺; 肖凡; 龙柳

doi:10.19912/j.0254-0096.tynxb.2023-1424

PDF(1522 KB)

太阳能学报 ›› 2025, Vol. 46 ›› Issue (1) : 251-260. DOI: 10.19912/j.0254-0096.tynxb.2023-1424

基于Si IGBT与SiC FET并联的新型混合器件特性解析及对比研究

朱梓贤, 涂春鸣, 肖标, 郭祺, 肖凡, 龙柳

作者信息 +

CHARACTERIZATION AND COMPARISON RESEARCH OF NOVEL HYBRID SWITCH WITH SI IGBT AND SIC FET IN PARALLEL

Zhu Zixian, Tu Chunming, Xiao Biao, Guo Qi, Xiao Fan, Long Liu

Author information +

文章历史 +

摘要

对由SiC FET与Si IGBT并联组成的新型混合器件（HY_F）开展研究。首先,分析HY_F的基本结构与工作原理,并搭建HY_F的导通损耗模型、开通损耗模型以及关断损耗模型。其次,基于混合器件的仿真模型,分析HY_F与传统Si IGBT/SiC MOSFET混合器件（HY_M）在不同额定电流等级下损耗与成本的优劣势。仿真结果表明,当额定电流为较小（15 A）时,HY_M能以较低的成本实现更低的损耗;混合器件在额定电流较大（25 A、40 A）时,HY_F能以更低的成本实现更低的损耗。最后,通过实验验证结论的正确性。

Abstract

In this paper, a novel hybrid switch（HY_F） composed of SiC FET and Si IGBT in parallel is studied. Firstly, the basic structure and working principle of HY_F are analyzed, and the conduction loss model, turn-on loss model and turn-off loss model are built. Secondly, based on the simulation model of the hybrid switch, the advantages and disadvantages of the loss and cost of HY_F and conventional Si IGBT/Si MOSFET hybrid switch（HY_M） at different rated current levels are analyzed. The simulation results show that HY_M can achieve lower loss at lower cost when the rated current is small（15 A）, HY_F can achieve lower loss at lower cost when the rated current of hybrid switches is large （25 A, 40 A）. Finally, the correctness of the conclusions is verified experimentally.

导出引用

朱梓贤, 涂春鸣, 肖标, 郭祺, 肖凡, 龙柳. 基于Si IGBT与SiC FET并联的新型混合器件特性解析及对比研究[J]. 太阳能学报. 2025, 46(1): 251-260 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1424

Zhu Zixian, Tu Chunming, Xiao Biao, Guo Qi, Xiao Fan, Long Liu. CHARACTERIZATION AND COMPARISON RESEARCH OF NOVEL HYBRID SWITCH WITH SI IGBT AND SIC FET IN PARALLEL[J]. Acta Energiae Solaris Sinica. 2025, 46(1): 251-260 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1424

中图分类号： TM64

参考文献

[1] 孙孝峰, 谷岭, 骆志伟, 等. 一种基于可靠性的大功率开关模块选择方法[J]. 太阳能学报, 2017, 38(3): 734-741.
SUN X F, GU L, LUO Z W, et al.A selection method of high power modules based on reliability[J]. Acta energiae solaris sinica, 2017, 38(3): 734-741.
[2] 胡姚刚, 时萍萍, 李辉, 等. 风电变流器IGBT模块有效工作芯片状态评估[J]. 太阳能学报, 2021, 42(5): 373-379.
HU Y G, SHI P P, LI H, et al.Effective chip number assessment method of IGBT module of wind power converter[J]. Acta energiae solaris sinica, 2021, 42(5): 373-379.
[3] GONZALEZ J O, WU R Z, JAHDI S, et al.Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs[J]. IEEE transactions on industrial electronics, 2020, 67(9): 7375-7385.
[4] 刘兴瑜, 杜明星, 尹金良, 等. 一种并联SiC MOSFETs的静态均流方法[J]. 太阳能学报, 2023, 44(7): 147-154.
LIU X Y, DU M X, YIN J L, et al.A static current sharing method for paralleled SiC MOSFETs[J]. Acta energiae solaris sinica, 2023, 44(7): 147-154.
[5] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1752.
SHENG K, REN N, XU H Y.A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1752.
[6] 井开源, 林磊, 殷天翔, 等. 基于Si IGBT和SiC MOSFET的飞跨电容MMC拓扑及其调制策略[J]. 高电压技术, 2022, 48(10): 4060-4071.
JING K Y, LIN L, YIN T X, et al.Flying-capacitor MMC topology combining Si IGBT and SiC MOSFET with its modulation strategy[J]. High voltage engineering, 2022, 48(10): 4060-4071.
[7] ANTHON A, ZHANG Z, ANDERSEN M A E, et al. The benefits of SiC mosfets in a T-type inverter for grid-tie applications[J]. IEEE transactions on power electronics, 2017, 32(4): 2808-2821.
[8] 钱照明, 张军明, 盛况. 电力电子器件及其应用的现状和发展[J]. 中国电机工程学报, 2014, 34(29): 5149-5161.
QIAN Z M, ZHANG J M, SHENG K.Status and development of power semiconductor devices and its applications[J]. Proceedings of the CSEE, 2014, 34(29): 5149-5161.
[9] 郑丹, 张少昆, 李磊, 等. SiC MOSFET开关损耗测试方法研究[J]. 中国电机工程学报, 2020, 40(9): 2975-2982.
ZHENG D, ZHANG S K, LI L, et al.Research on switching losses testing method for SiC MOSFET[J]. Proceedings of the CSEE, 2020, 40(9): 2975-2982.
[10] 李先允, 卢乙, 倪喜军, 等. 一种改进SiC MOSFET开关性能的有源驱动电路[J]. 中国电机工程学报, 2020, 40(18): 5760-5769.
LI X Y, LU Y, NI X J, et al.An active gate driver for improving switching performance of SiC MOSFET[J]. Proceedings of the CSEE, 2020, 40(18): 5760-5769.
[11] 李宗鉴, 王俊, 江希, 等. Si IGBT/SiC MOSFET混合器件及其应用研究[J]. 电源学报, 2020, 18(4): 58-70.
LI Z J, WANG J, JIANG X, et al.Si IGBT/SiC MOSFET hybrid switch and its applications[J]. Journal of power supply, 2020, 18(4): 58-70.
[12] GUAN Q X, LI C S, ZHANG Y, et al.An extremely high efficient three-level active neutral-point-clamped converter comprising SiC and Si hybrid power stages[J]. IEEE transactions on power electronics, 2018, 33(10): 8341-8352.
[13] FU Y S, MA Z R, REN H P.A low cost compact SiC/Si hybrid switch gate driver circuit for commonly used triggering patterns[J]. IEEE transactions on power electronics, 2022, 37(5): 5212-5223.
[14] WEI Y Q, WOLDEGIORGIS D, SWEETING R, et al.Four control freedoms AGD for hybrid SiC MOSFET and Si IGBT application[C]//2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Phoenix, AZ, USA, 2021: 2211-2216.
[15] LI Z J, WANG J, JI B, et al.Power loss model and device sizing optimization of Si/SiC hybrid switches[J]. IEEE transactions on power electronics, 2020, 35(8): 8512-8523.
[16] WANG Y, ZHU N, YAN C, et al.Efficiency improvement of 2-and 3-level inverters for distributed photovoltaic application using hybrid devices[C]//2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC). Taipei, China, 2015: 1-7.
[17] ZHAO C, WANG L L, YANG X, et al.Comparative investigation on paralleling suitability for SiC MOSFETs and SiC/Si cascode devices[J]. IEEE transactions on industrial electronics, 2022, 69(4): 3503-3514.
[18] ZHAO C, WANG L L, YANG X, et al.A low-cost novel structure for paralleled SiC JFET/Si MOSFET cascodes to balance turn-on current and junction temperature[J]. IEEE transactions on power electronics, 2022, 37(12): 14447-14461.
[19] HUANG A Q, SONG X Q, ZHANG L Q.6.5 kV Si/SiC hybrid power module: an ideal next step?[C]//2015 IEEE International Workshop on Integrated Power Packaging (IWIPP). Chicago, IL, USA, 2015: 64-67.
[20] SHIMIZU H, AKIYAMA S, YOKOYAMA N, et al.Controllability of switching speed and loss for SiC JFET/Si MOSFET cascode with external gate resistor[C]//2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). Waikoloa, HI, USA, 2014: 221-224.
[21] SONG X Q, HUANG A Q, PENG C, et al.Improved 6.5kV FREEMD-pair based on SiC JFET and Si IGBT[C]//2016 IEEE Applied Power Electronics Conference and Exposition (APEC). Long Beach, CA, USA, 2016: 269-275.
[22] MINAMISAWA R A, VEMULAPATI U, MIHAILA A, et al.Current sharing behavior in Si IGBT and SiC MOSFET cross-switch hybrid[J]. IEEE electron device letters, 2016, 37(9): 1178-1180.
[23] LI Z J, WANG J, DENG L F, et al.Active gate delay time control of Si/SiC hybrid switch for junction temperature balance over a wide power range[J]. IEEE transactions on power electronics, 2020, 35(5): 5354-5365.
[24] WANG J, LI Z J, JIANG X, et al.Gate control optimization of Si/SiC hybrid switch for junction temperature balance and power loss reduction[J]. IEEE transactions on power electronics, 2019, 34(2): 1744-1754.
[25] HE J B, KATEBI R, WEISE N.A current-dependent switching strategy for Si/SiC hybrid switch-based power converters[J]. IEEE transactions on industrial electronics, 2017, 64(10): 8344-8352.