对太阳电池而言,较低的接触电阻率是实现高转换效率的关键参数,特别是对于载流子选择接触的结构,比如晶硅异质结（HJT）太阳电池。接触电阻率（ρc）通常用Cox-Strack方法（简称CSM）或转移长度方法（TLM）计算得到。无论是哪种方法,均需要在特定金属电极图案下测得,而难于在真实的太阳电池器件中测得。对于硅基异质结（HJT）太阳电池而言,接触电阻率（ρc）包含银（Ag）电极与氧化铟锡（ITO）的接触电阻率ρc1,以及ITO与p或n型掺杂非晶硅的隧穿接触电阻率ρc2。为此,要精确测得ρc1和ρc2,需分别制备特定结构以便测量。该文提出一种新的TLM测试方法,在实际的HJT太阳电池器件上,同时测量出电子在Ag/ITO界面的接触电阻率ρc1值2.5~3.1 mΩ•cm2,ITO与n型掺杂非晶硅的隧穿接触电阻率ρc2值21~24 mΩ•cm2。这两个值与文献报道基本一致。
Abstract
For solar cells, low enough contact resistivity is a key parameter for achieving high conversion efficiency, especially for carrier selective contact structures such as crystalline silicon heterojunction （HJT） solar cells. Contact resistivity ρc is usually calculated by Cox Strack method （CSM） or Transfer Length Method （TLM）. It is necessary to use some specific metal electrode patterns with either of the methods, which is difficult for real solar cell devices. For silicon heterojunction （HJT） solar cells, contact resistivity ρc consists of the silver electrode and ITO contact resistivity ρc1 and the tunneling contact resistivity ρc2 of ITO with p-or n-type doped amorphous silicon. Therefore, it is necessary to use different specific structures for accurate measurement of ρc1 and ρc2. In this article, we propose a new TLM method using which we could simultaneously measures the electrons contact resistivity between silver electrodes and ITO ρc1, as well as between ITO and n-type doped amorphous silicon ρc2 on actual HJT solar cell devices. The electrons contact resistivity value for ρc2 is 2.5-3.1 mΩ•cm2, and the electron tunneling contact resistivity ρc2 value is 21-24 mΩ•cm2, which are quite consistent with literature reports.
关键词
硅太阳电池 /
异质结 /
接触电阻 /
隧穿接触 /
电子
Key words
silicon solar cells /
heterojunctions /
contact resistance /
tunneling contact /
electron
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