基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展

胡梦琪; 苏炬; 王光红; 刁宏伟; 赵雷; 王文静

doi:10.19912/j.0254-0096.tynxb.2023-1755

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太阳能学报 ›› 2025, Vol. 46 ›› Issue (3) : 342-347. DOI: 10.19912/j.0254-0096.tynxb.2023-1755

基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展

胡梦琪^1,2, 苏炬^1,2, 王光红^1,2, 刁宏伟¹, 赵雷^1,2, 王文静^1~3

作者信息 +

RESEARCH PROGRESS OF CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS WITH METAL OXIDE CARRIER-SELECTIVE CONTACTS

Hu Mengqi^1,2, Su Ju^1,2, Wang Guanghong^1,2, Diao Hongwei¹, Zhao Lei^1,2, Wang Wenjing^1~3

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文章历史 +

摘要

晶硅异质结（HJT）太阳电池的转换效率已达到26.81%,然而其使用有毒有害气体掺杂的传输层存在不可避免的寄生吸收损失,阻止了器件性能的进一步提升。因此,宽带隙非掺杂的钝化接触太阳电池受到极大关注。该文对载流子选择性传输原理、非掺杂钝化接触材料及其主要沉积方法、非掺杂空穴/电子选择性材料的研究现状及器件稳定性改善方式进行概述,并对钝化接触型非掺杂晶硅异质结太阳电池存在的问题和前景进行讨论。

Abstract

The conversion efficiency of crystalline silicon heterojunction （HJT） solar cells has reached 26.81%, however, there are unavoidable parasitic absorption losses in their transport layer doped with toxic and hazardous gases, preventing further improvement of device performance. Therefore, wide bandgap dopant-free passivated contact solar cells have received great attention. This paper provides an overview of the carrier-selective transport principle, dopant-free passivated contact materials and their main deposition methods, the current research status of dopant-free hole/electron-selective materials and the improvement of device stability. The problems and prospects of passivation contact type dopant-free crystalline silicon heterojunction solar cells are also discussed.

导出引用

胡梦琪, 苏炬, 王光红, 刁宏伟, 赵雷, 王文静. 基于金属氧化物载流子选择性传输层的硅异质结太阳电池的研究进展[J]. 太阳能学报. 2025, 46(3): 342-347 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1755

Hu Mengqi, Su Ju, Wang Guanghong, Diao Hongwei, Zhao Lei, Wang Wenjing. RESEARCH PROGRESS OF CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS WITH METAL OXIDE CARRIER-SELECTIVE CONTACTS[J]. Acta Energiae Solaris Sinica. 2025, 46(3): 342-347 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1755

中图分类号： O472

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