衬底温度对热丝CVD法沉积氧化钨的影响研究

张旭; 郭丛; 陈涛; 俞健; 唐水花

doi:10.19912/j.0254-0096.tynxb.2023-1770

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太阳能学报 ›› 2025, Vol. 46 ›› Issue (3) : 335-341. DOI: 10.19912/j.0254-0096.tynxb.2023-1770

衬底温度对热丝CVD法沉积氧化钨的影响研究

张旭, 郭丛, 陈涛, 俞健, 唐水花

作者信息 +

STUDY ON EFFECT OF SUBSTRATE TEMPERATURE ON TUNGSTEN OXIDE FILMS BY HOT-WIRE CVD DEPOSITION

Zhang Xu, Guo Cong, Chen Tao, Yu Jian, Tang Shuihua

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文章历史 +

摘要

通过热丝化学气相沉积法制备氧化钨（WO_x）薄膜,并将其应用于无掺杂异质结太阳电池。研究表明,衬底温度在沉积过程中起着重要作用,衬底温度从室温升高到200 ℃,WO_x薄膜的表面颗粒尺寸减小,薄膜更加致密;功函数先升高再迅速下降;透过率在150 ℃以内无明显变化,继续升高温度后迅速降低。通过取代p型非晶硅层,将其应用于无掺杂硅异质结太阳电池中作为空穴选择接触层。在衬底温度为100 ℃的条件下,利用高透明的WO_x层,获得最佳转换效率为14.63%的太阳电池。

Abstract

Tungsten oxide （WO_x） thin films were prepared via hot-wire chemical vapor deposition and applied to dopant-free silicon heterojunction solar cells. It was found that substrate temperature played a crucial role during the deposition process. As the substrate temperature increased from room temperature to 200 ℃, the surface particle size of the WO_x thin film decreased, and the film became denser. The work function first increased and then rapidly decreased. The transmittance showed no significant change when the temperature lower than 150 ℃, but rapidly decreased as the further increased temperature. By replacing the p-type amorphous silicon layer, it was applied to dopant-free silicon heterojunction solar cells as a hole-selective contact layer. Under the condition of a substrate temperature of 100 ℃, the highest conversion efficiency of 14.63% was achieved at the substrate temperature of 100 ℃. This work demonstrated the feasibility and great potential of preparing WO_x by hot-wire chemical vapor deposition for high-efficiency dopant-free silicon heterojunction solar cells.

导出引用

张旭, 郭丛, 陈涛, 俞健, 唐水花. 衬底温度对热丝CVD法沉积氧化钨的影响研究[J]. 太阳能学报. 2025, 46(3): 335-341 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1770

Zhang Xu, Guo Cong, Chen Tao, Yu Jian, Tang Shuihua. STUDY ON EFFECT OF SUBSTRATE TEMPERATURE ON TUNGSTEN OXIDE FILMS BY HOT-WIRE CVD DEPOSITION[J]. Acta Energiae Solaris Sinica. 2025, 46(3): 335-341 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1770

中图分类号： TM914.4

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