颗粒硅中氢杂质对直拉单晶硅的影响及控制措施分析

李杰; 黄虎一雄; 章金兵

doi:10.19912/j.0254-0096.tynxb.2024-0390

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太阳能学报 ›› 2025, Vol. 46 ›› Issue (7) : 568-576. DOI: 10.19912/j.0254-0096.tynxb.2024-0390

第二十七届中国科协年会学术论文

颗粒硅中氢杂质对直拉单晶硅的影响及控制措施分析

李杰^1,2, 黄虎一雄^1,2, 章金兵²

作者信息 +

ANALYSIS OF EFFECTS OF HYDROGEN IMPURITIES IN GRANULAR POLYSILICON ON CZOCHRALSKI-GROWN MONOCRYSTALLINE SILICON AND CONTROL MEASURES

Li Jie^1,2, Huang Huyixiong^1,2, Zhang Jinbing²

Author information +

文章历史 +

摘要

硅烷流化床法制备的颗粒多晶硅因工艺缺陷使得其氢杂质含量比改良西门子法制备的棒状硅高,这导致在后续的直拉单晶硅生产过程中产生“氢跳”现象,该现象会对设备和产品造成一系列的负面影响。产线上和研究者们都在不断地寻找合适的方法去除颗粒硅中的氢杂质,以避免“氢跳”现象的发生,但目前针对此类的研究报道尚少。该文分析了颗粒硅内氢杂质可能的形成过程,阐述了颗粒硅中氢杂质对直拉单晶硅的影响及其控制措施,提出颗粒硅中氢杂质去除所面临的问题与挑战。最后,对未来有关颗粒硅中氢杂质的研究发展提出建议。

Abstract

The silane fluidized bed method utilized in the preparation of granular polysilicon tends to exhibit higher hydrogen impurity content compared to rod silicon by the modified Siemens method, resulting in the occurrence of the “hydrogen jump” phenomenon during the producing of the Czochralski monocrystalline silicon. This phenomenon, in turn, imposes negative impacts on both equipment and products. Both production lines and researchers are constantly searching for suitable methods to remove hydrogen impurities from granular polysilicon to avoid the occurrence of “hydrogen jump” phenomenon, but there are currently few reports on such research. This paper analyzes the potential formation processes of hydrogen impurities in granular polysilicon. It also illustrates the impacts of hydrogen impurities in granular polysilicon on the Czochralski monocrystalline silicon, as well as the corresponding control measures for these impacts. Furthermore, it discusses the challenges and issues of removing hydrogen impurities from granular polysilicon. Finally, recommendations are made for future research directions on hydrogen impurities in granular polysilicon.

导出引用

李杰, 黄虎一雄, 章金兵. 颗粒硅中氢杂质对直拉单晶硅的影响及控制措施分析[J]. 太阳能学报. 2025, 46(7): 568-576 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0390

Li Jie, Huang Huyixiong, Zhang Jinbing. ANALYSIS OF EFFECTS OF HYDROGEN IMPURITIES IN GRANULAR POLYSILICON ON CZOCHRALSKI-GROWN MONOCRYSTALLINE SILICON AND CONTROL MEASURES[J]. Acta Energiae Solaris Sinica. 2025, 46(7): 568-576 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0390

中图分类号： TQ127.2

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