该文研究吸杂工艺对HJT太阳电池性能提升的影响。首先,分析硅片在硅棒不同位置的质量差异,研究发现C、O浓度的分布与少子寿命的变化存在一定的关联性,并受分凝系数的影响;其次,研究吸杂对硅片的影响,发现吸杂后的硅片体内金属杂质含量比吸杂前低,从而使得硅片的少子寿命得到提升,而C、O浓度的变化很小;进而,研究不同吸杂工艺下硅片的HJT太阳电池性能变化,结果显示1 h以上和单双面的不同吸杂工艺条件差异较小;最后,研究吸杂前后的不同少子寿命对HJT太阳电池性能的影响,并探索硅片少子寿命的下限。研究结果表明,吸杂工艺可降低太阳电池成品片性能对原料片品质的依赖,这将有利于成品片的效率稳定,降低原料片成本,是高效HJT太阳电池降本增效的有效方法。
Abstract
This paper investigates the effect of the gettering process on the performance enhancement of HJT solar cells. Firstly, the performance difference of silicon wafers at different positions of the silicon rods was analyzed, and it was found that the distribution of C and O concentration was correlated with the changes in the minority lifetime. Secondly, the effect of gettering process on silicon wafers was investigated, and it was found that the concentration of metal impurities in the bulk of wafers was decreased after gettering, which leads to the enhancement of the minority lifetime of the wafers and IV characteriftics. Further more, different gettering process conditions on the solar cells’ performance were investigated, and the results showed minimal differences among these conditions in terms of solar cell performance. Finally, the efficiency difference of different minority lifetime ranges before and after gettering was studied, and the lower limit of the minority lifetime of silicon wafers was explored. The study shows that the gettering process could reduce the quality and cost requirements of raw silicon wafers for gettering process can decrease the concentration of metal impurities and SRH recombination, which is conducive to the efficiency stability of the production line and a very suitable cost down process and an effective efficiency enhancement method for the mass production of HJT high-efficiency solar cells.
关键词
太阳电池 /
吸杂 /
扩散 /
寿命
Key words
solar cell /
gettering /
diffusion /
lifetime
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