为探究碳元素在化学气相沉积过程中的热力学行为,对CH4Cl2Si-SiHCl3-H2体系的平衡气相组分及固相产物进行分析,探究反应温度、系统压强和进气原料配比对硅碳沉积行为的影响。结果表明：在化学气相沉积阶段,硅沉积的热力学条件为1200 ℃、0.1 MPa、物质的量之比n（H2）∶n（SiHCl3）=15∶1时,多晶硅产率最大可达到34.00%;而降低多晶硅产品中碳含量的有利热力学条件是高温、高压以及进气原料中H2过量,在1150 ℃、0.1 MPa和n（H2）∶n（SiHCl3）=50∶1时多晶硅中碳元素的沉积量可降至0.78×10-9以下。
Abstract
To investigate the thermodynamic behavior of carbon in chemical vapor deposition process, the equilibrium gas phase components and solid phase products of the CH4Cl2Si-SiHCl3-H2 system were analyzed. The study also examined the effects of reaction temperature, system pressure, and inlet raw material ratio on silicon carbon deposition behavior.The results indicate that under thermodynamic conditions of 1200 ℃, 0.1 MPa, with a n（H2）∶n（SiHCl3）=15∶1, a maximum polysilicon yield of 34.00% can be achieved. Furthermore, favorable thermodynamic conditions for reducing carbon content in polysilicon products include high temperature, high pressure, and an excess amount of H2 in the intake raw material. Specifically at 1150 ℃ and 0.1 MPa with a n（H2）∶n（SiHCl3）=50∶1, it is found that the amount of carbon deposition in polysilicon can be reduced to less than 0.78×10-9.
关键词
化学气相沉积 /
热力学 /
多晶硅 /
碳原子 /
产物分析 /
Si-H-Cl-C体系
Key words
chemical vapor deposition /
thermodynamics /
polysilicon /
carbon atom /
product analysis /
Si-H-Cl-C system
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