基于结温免疫电参数组合的IGBT模块键合线老化监测方法

范合畅, 杜明星

太阳能学报 ›› 2025, Vol. 46 ›› Issue (11) : 244-250.

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太阳能学报 ›› 2025, Vol. 46 ›› Issue (11) : 244-250. DOI: 10.19912/j.0254-0096.tynxb.2024-1193

基于结温免疫电参数组合的IGBT模块键合线老化监测方法

  • 范合畅, 杜明星
作者信息 +

BONDING WIRE AGING MONITORING METHOD BASED ON COMBINATION OF JUNCTION TEMPERATURE IMMUNITY ELECTRICAL PARAMETERS IN IGBT MODULE

  • Fan Hechang, Du Mingxing
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文章历史 +

摘要

摘 要:提出一种基于结温免疫电参数组合的绝缘栅双极晶体管(IGBT)模块内部键合线老化监测方法。研究IGBT模块的阈值电压、跨导、键合线老化和结温之间的关系。IGBT模块跨导包含有关键合线老化状态和结温变化的信息。阈值电压作为估算结温的最佳参数之一,在测量时间较短、键合线断裂未引起明显结温差时,无法评估键合线老化状态。利用模块跨导和阈值电压之间键合线老化表征的差异,可消除实际应用工况下多因素造成的温升差对键合线老化状态监测的影响。

Abstract

This paper proposes a method for monitoring the internal bond wire aging of IGBT modules based on the combination of junction-temperature-immune electrical parameters. The relationships among the threshold voltage, transconductance, bond wire aging and junction temperature of IGBT modules are investigated. The transconductance of IGBT modules contains information about the aging state of the bond wire and the change of junction temperature. Threshold voltage, one of the best parameters for estimating junction temperature, is not able to assess the bond wire aging state when the measurement time is short and the bond wire breakage does not cause significant junction temperature difference. Using the difference in bond wire aging characterization between the module transconductance and threshold voltage, the influence of temperature differences caused by multiple factors on the monitoring of bond wire aging state under practical operating conditions is eliminated.

关键词

逆变器 / 绝缘栅双极晶体管(IGBT) / 跨导 / 阈值电压 / 键合线老化 / 结温免疫电参数组合

Key words

converts insulated gate bipolar transistor(IGBT) / transconductance / threshold voltage / bond wire aging / combination of junction temperature immunity electrical parameters

引用本文

导出引用
范合畅, 杜明星. 基于结温免疫电参数组合的IGBT模块键合线老化监测方法[J]. 太阳能学报. 2025, 46(11): 244-250 https://doi.org/10.19912/j.0254-0096.tynxb.2024-1193
Fan Hechang, Du Mingxing. BONDING WIRE AGING MONITORING METHOD BASED ON COMBINATION OF JUNCTION TEMPERATURE IMMUNITY ELECTRICAL PARAMETERS IN IGBT MODULE[J]. Acta Energiae Solaris Sinica. 2025, 46(11): 244-250 https://doi.org/10.19912/j.0254-0096.tynxb.2024-1193
中图分类号: TN322.8   

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基金

天津市自然科学基金重点项目(24JCZDJC00690)

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