模拟优化硼掺杂多晶硅提升交叉背接触电池性能

储余; 厉佥元; 刘焱康; 孟阳; 张传香; 陶海军

doi:10.19912/j.0254-0096.tynxb.2024-2041

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太阳能学报 ›› 2026, Vol. 47 ›› Issue (3) : 747-752. DOI: 10.19912/j.0254-0096.tynxb.2024-2041

模拟优化硼掺杂多晶硅提升交叉背接触电池性能

储余¹, 厉佥元¹, 刘焱康¹, 孟阳¹, 张传香², 陶海军¹

作者信息 +

NUMERICAL SIMULATION AND OPTIMIZATION OF BORON-DOPED POLYSILICON FOR INTERDIGITATED BACK CONTACT SOLAR CELLS

Chu Yu¹, Li Qianyuan¹, Liu Yankang¹, Meng Yang¹, Zhang Chuanxiang², Tao Haijun¹

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文章历史 +

摘要

利用Quokka3模拟软件,系统分析硼掺杂多晶硅（p-poly）的钝化性能、接触性能及图形设计对交叉背接触（IBC）电池性能的影响。在此基础上,详细讨论隧穿氧化层界面复合大小、多晶硅层掺杂浓度及硅基体内扩区对p-poly钝化性能的影响,阐述实现p-poly优异钝化性能的必要条件。

Abstract

Using the Quokka3 simulation software, we systematically analyze the impact of boron-doped polysilicon （p-poly） passivation and contact performance, as well as pattern design, on the performance of interdigitated back contact （IBC） solar cells. On this basis, we further discuss in detail the effects of the tunnel oxide interface recombination rate, the doping concentration of the polysilicon layer, and the diffusion region formed in the silicon substrate on the passivation performance of p-poly, and we outline the essential conditions required to achieve excellent passivation performance with p-poly passivating contacts.

导出引用

储余, 厉佥元, 刘焱康, 孟阳, 张传香, 陶海军. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 太阳能学报. 2026, 47(3): 747-752 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2041

Chu Yu, Li Qianyuan, Liu Yankang, Meng Yang, Zhang Chuanxiang, Tao Haijun. NUMERICAL SIMULATION AND OPTIMIZATION OF BORON-DOPED POLYSILICON FOR INTERDIGITATED BACK CONTACT SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2026, 47(3): 747-752 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2041

中图分类号： TK914.4+1

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