集电极-发射极饱和压降Vce,sat会随绝缘栅双极晶体管（IGBT）模块键合线脱落而增加因此常被用作器件劣化监测的特征参量,但在实际功率模块运行中,Vce,sat受结温Tj和集电极电流Ic的双重影响,提出一种基于集-射极电压特征参量初始值校正的焊接型IGBT模块键合线劣化监测方法。通过对不同温度下IGBT输出特性曲线进行数学建模,分析Tj和Ic与Vce,sat之间的关系,建立不同Tj和Ic条件下Vce,sat的理论值计算方程。在实际监测中,利用该方程计算功率模块不同运行工况下对应的Tj和Ic条件下的Vce,sat初始值,从而实现集-射极饱和压降增幅η的电压初始值校正,以降低Tj和Ic对η的影响。通过人为剪断键合线方式模拟键合线脱落情况,对比分析电压初始值校正前后η的变化。结果表明,在IGBT模块达到失效临界之前,该方法能显著减小Tj和Ic对η的影响,使Vce,sat的增加主要由键合线劣化决定。实验结果与理论分析一致,验证了该方法在不同工况下监测IGBT模块键合线失效的可行性和工程适用性。
Abstract
The collector-emitter saturation voltage （Vce,sat） of an insulated gate bipolar transistor（IGBT） module increases with bond wire lift-off, making it a common characteristic parameter for degradation monitoring. However, during actual operation, Vce,sat is influenced by both junction temperature （Tj） and collector current （Ic）. This paper proposes a bond wire degradation monitoring method for wire-bonded IGBT modules based on initial-value correction of the collector-emitter voltage characteristic parameter. By mathematically modeling the IGBT output characteristic curves at different temperatures, the relationships amongTj,Ic, and Vce,sat are analyzed, and an equation for calculating the theoretical Vce,sat under varying Tj and Ic conditions is established. During monitoring, this equation is used to compute the initial Vce,sat corresponding to actual Tj and Ic under different operating conditions, thereby achieving initial-value correction for the normalized increase ηin saturation voltage. This correction reduces the influence of Tj and Ic onη. In this study, bond wire degradation was simulated by deliberately cutting wires, and changes in ηbefore and after correction were compared. The results show that, prior to the failure threshold, the proposed method significantly mitigates the effects of Tj and Ic onη, ensuring that the increase in Vce,sat is primarily attributable to bond wire degradation. The experimental results align well with theoretical analysis, confirming the feasibility and engineering applicability of this method for monitoring bond wire failure in IGBT modules under varying operating conditions.
关键词
绝缘栅双极型晶体管 /
状态监测 /
键合线 /
加速老化试验 /
饱和压降 /
失效
Key words
insulated gate bipolar transistor （IGBT） /
condition monitoring /
bond wire /
accelerated aging test /
saturation voltage drop /
failure
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基金
国网河北省电力有限公司科技项目（kj2023-073）
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