研究热辅助光注入对晶体硅/非晶硅异质结（SHJ）太阳电池以及掺杂非晶硅薄膜光电性能的影响,并通过优化光注入条件提升太阳电池性能。实验结果证实：光注入可有效提升SHJ太阳电池的光电转换效率（增幅为0.23%）,主要来源于填充因子提升0.91%。而热辅助光注入提升效果更加明显,填充因子和光电转换效率的增幅分别为0.98%和0.34%。通过测试掺杂非晶硅薄膜在光注入前后的暗电导率变化发现,热辅助光注入可有效改善薄膜的电学性能,使n型非晶硅薄膜暗电导率增益比值达到9.05。通过少子寿命测试发现,热辅助光注入可改善太阳电池的场钝化性能,减少少数载流子界面间复合,从而使SHJ太阳电池输出性能的光致增益达到0.34%。
Abstract
This paper investigated the effect of thermally assisted light soaking （TALS） on the performance of amorphous/crystalline silicon heterojunction （SHJ） solar cells. The experimental results confirm that light soaking （LS） effectively improves the power conversion efficiency and fill factor of SHJ solar cells by 0.23% and 0.91%, while TALS increases the gain to 0.34% and 0.98%. By measuring the dark electric conductivity of doped amorphous silicon films before and after the TALS, it is found that TALS has more significant effect on improving the electrical properties of the films compared to LS, enabling n-type amorphous silicon thin film dark electric conductivity gain ratio of 9.05. Combined with Sinton WCT-120 and Suns-Voc measurements, it is concluded that TALS improves the field passivation performance, enhancing the built-in electric field strength of crystalline silicon and amorphous silicon heterojunction, thus reduces the recombination of minority carriers at the interface, resulting in a light-induced gain of 0.34% in the output performance of SHJ solar cells.
关键词
晶体硅/非晶硅异质结太阳电池 /
硅异质结太阳电池 /
光注入 /
热辅助光注入 /
电导率 /
少子寿命
Key words
amorphous/crystalline silicon heterojunction solar cells /
silicon heterojunction solar cells /
light soaking /
thermally assisted light soaking /
photo conductivity /
minority carrier lifetime
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
参考文献
[1] 杨煜豪, 刘文柱, 张丽平, 等. 晶硅异质结太阳电池nc-Si:H/nc-SiOx:H叠层窗口层研究[J]. 太阳能学报, 2023, 44(8): 203-207.
YANG Y H, LIU W Z, ZHANG L P, et al.Research on nc-Si:H/nc-SiOx:H stacked thin films as silicon heterojunction solar cell window layer[J]. Acta energiae solaris sinica, 2023, 44(8): 203-207.
[2] 姚宇波, 张丽平, 刘文柱, 等. 不同背反射结构在硅异质结太阳电池中的应用研究[J]. 太阳能学报, 2022, 43(10): 37-42.
YAO Y B, ZHANG L P, LIU W Z, et al.Research on application of different back reflection structures in silicon heterojunction solar cells[J]. Acta energiae solaris sinica, 2022, 43(10): 37-42.
[3] WANG G S, SU Q, TANG H B, et al.27.09%-efficiency silicon heterojunction back contact solar cell and going beyond[J]. Nature communications, 2024, 15: 8931.
[4] STAEBLER D L, WRONSKI C R.Reversible conductivity changes in discharge-produced amorphous Si[J]. Applied physics letters, 1977, 31(4): 292-294.
[5] KOBAYASHI E, DE WOLF S, LEVRAT J, et al.Light-induced performance increase of silicon heterojunction solar cells[J]. Applied physics letters, 2016, 109(15): 153503.
[6] KOBAYASHI E, DE WOLF S, LEVRAT J, et al.Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking[J]. Solar energy materials and solar cells, 2017, 173: 43-49.
[7] LIU W Z, SHI J H, ZHANG L P, et al.Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells[J]. Nature energy, 2022, 7(5): 427-437.
[8] LI X D, YANG Y H, HUANG S L, et al.Reassessment of silicon heterojunction cell performance under operating conditions[J]. Solar energy materials and solar cells, 2022, 247: 111951.
[9] DUAN W Y, RUDOLPH T, GEBREWOLD H T, et al.Insights into the heat-assisted intensive light-soaking effect on silicon heterojunction solar cells[J]. Solar RRL, 2024, 8(19): 2400383.
[10] STUTZMANN M, JACKSON W B, SMITH A J, et al.Light-induced metastable defects in amorphous silicon: the role of hydrogen[J]. Applied physics letters, 1986, 48(1): 62-64.
[11] PANDEY A, CAI B, PODRAZA N, et al.Electrical activity of boron and phosphorus in hydrogenated amorphous silicon[J]. Physical review applied, 2014, 2(5): 054005.
[12] OLIBET S, VALLAT-SAUVAIN E, BALLIF C.Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds[J]. Physical review B, 2007, 76(3): 035326.
[13] SINTON R A, CUEVAS A, STUCKINGS M.Quasi-steady-state photoconductance, a new method for solar cell material and device characterization[C]//Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference-1996. Washington, DC, USA, 2002: 457-460.
基金
国家自然科学基金（T2322028; 62474184; 62004208）; 国家重点研发计划（2022YFC2807104）
PDF(1740 KB)
