晶体硅太阳电池富硼层与富磷层共刻蚀工艺研究

李文昊; 王会鹏; 何仁; 黄志平; 韦德远; 许颖

doi:10.19912/j.0254-0096.tynxb.2025-0626

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太阳能学报 ›› 2026, Vol. 47 ›› Issue (8) : 217-224. DOI: 10.19912/j.0254-0096.tynxb.2025-0626

晶体硅太阳电池富硼层与富磷层共刻蚀工艺研究

李文昊¹, 王会鹏¹, 何仁¹, 黄志平², 韦德远³, 许颖¹

作者信息 +

INVESTIGATION OF CO-ETCHING PROCESS OF BORON-RICH AND PHOSPHORUS-RICH LAYERS FOR CRYSTALLINE SILICON SOLAR CELLS

Li Wenhao¹, Wang Huipeng¹, He Ren¹, Huang Zhiping², Wei Deyuan³, Xu Ying¹

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文章历史 +

摘要

采用硝酸、氢氟酸和去离子水混合溶液湿法刻蚀的方法实现165 mm×165 mm尺寸晶体硅太阳电池衬底硼和磷热扩散后富硼层和富磷层同步刻蚀的工艺,并确定刻蚀液混合酸体积配比HF∶HNO₃∶H₂O=1∶5∶20且刻蚀时间5 min为最佳共刻蚀条件。该共刻蚀工艺可同时调控前发射结和背高低结的方块电阻,降低表面缺陷密度,提高晶体硅太阳电池的性能。

Abstract

The wet etching method with a mixed solution of nitric acid, hydrofluoric acid and deionized water is employed for the first time to achieve the co-etching of the boron-and phosphorus-rich layers on the 165 mm×165 mm substrate of crystalline silicon solar cell after thermal diffusion. The optimal co-etching conditions are determined as a mixed acid volume ratio of HF∶HNO₃∶H₂O=1∶5∶20 and the etching time of 5 min. The co-etching also simultaneously regulates the sheet resistance of the front emitter and the back collector junctions, reduces the surface defect density, and improves the performance of crystalline silicon solar cells.

导出引用

李文昊, 王会鹏, 何仁, 黄志平, 韦德远, 许颖. 晶体硅太阳电池富硼层与富磷层共刻蚀工艺研究[J]. 太阳能学报. 2026, 47(8): 217-224 https://doi.org/10.19912/j.0254-0096.tynxb.2025-0626

Li Wenhao, Wang Huipeng, He Ren, Huang Zhiping, Wei Deyuan, Xu Ying. INVESTIGATION OF CO-ETCHING PROCESS OF BORON-RICH AND PHOSPHORUS-RICH LAYERS FOR CRYSTALLINE SILICON SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2026, 47(8): 217-224 https://doi.org/10.19912/j.0254-0096.tynxb.2025-0626

中图分类号： TM615

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