In this paper, the emitter boron doping process is optimized for n-type IBC silicon wafer solar cell, and the experimental results are verified and analyzed by ENDA2 simulation software. The influence of different emitter boron diffusion processes on the performance of industrial IBC solar cell is investigated by the recombination loss analysis. The results show that the sheet resistance of 98 Ω/sq can be realized with higher drive-in temperature during boron diffusion process, which exhibits the lowest surface concentration of 1.68×1019 cm-3 and the deepest p-n junction depth of 0.88 μm, and results in the lowest recombination loss （J0,pass=24 fA/cm2） of the solar cells. Under 25 ℃, the AM 1.5 standard test conditions, the maximum efficiency of 23.4%（Voc=688.4 mV, Jsc=41.99 mA/cm2, FF=80.9%） is achieved for IBC solar cell with optimized boron diffusion process. Further, the power loss of each component of the champion cell is analyzed by numerical simulation, paving a new way for efficiency optimization in terms of the industrial IBC solar cell.
Key words
solar cells /
thermal diffusion /
numerical simulation /
IBC /
conversion efficiency /
industrialization
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
References
[1] SCHWARTZ R J, LAMMERT M D.Silicon solar cells for high concentration applications[C]//1975 International Electron Devices Meeting, Washington, USA, 1975.
[2] LAMMERT M D, SCHWARTZ R J.The interdigitated back contact solar cell: a silicon solar cell for use in concentrated sunlight[J]. IEEE transactions on electron devices, 1977, 24(4): 337-342.
[3] 张巍, 贾锐, 孙昀, 等. 针对N型IBC太阳电池中背结模型的建立及优化[J]. 太阳能学报, 2015, 36(5): 1274-1277.
ZHANG W, JIA R, SUN J, et al.The model building and optimization of rear junction in terms of n-type IBC solar cells[J]. Acta energiae solaris sinica, 2015, 36(5): 1274-1277.
[4] FRANKLIN E, FONG K, MCLNTOSH K, et al.Design, fabrication and characterisation of a 24.4% efficient interdigitated back contact solar cell[J]. Progress in photovoltaics: research and applications, 2016, 24(4): 411-427.
[5] 余双龙, 魏青竹, 李玉芳, 等. n型太阳电池硼扩散制备正面发射极工艺研究[J]. 太阳能学报, 2020, 41(3): 276-281.
YU S L, WEI Q Z,LI Y F, et al.Process investigation of front side emitter via boron diffusion in n-type solar cells[J]. Acta energiae solaris sinica, 2020, 41(3): 276-281.
[6] GRANEK F.High-efficiency back-contact back-junction silicon solar cells[D]. Freiburg: der Albert-Ludwigs-Universität Freiburg im Breisgau, 2010.
[7] BARKER W, THOMSON A.New program for uncertainty in PCD measurements using Monte Carlo method compatible with Sinton WCT-120 lifetime tester[C]//2015 Asia Pacific Solar Research Conference, Sydney, Australian, 2015.
[8] TRUPKE T, BARDOS R A, SCHUBERT M C, et al.Photoluminescence imaging of silicon wafers[J]. Applied physics letters, 2006, 89(4): 044107.
[9] PEINER E, SCHLACHETZKI A, KRUGER D.Doping profile analysis in Si by electrochemical capacitance-voltage measurements[J]. Journal of the electrochemical Society, 1995, 142(2): 576-580.
[10] MCINTOSH K,ALTERMATT P.A freeware 1D emitter model for silicon solar cells[C]//2010 IEEE 35th Photovoltaic Specialists Conference,Honolulu, USA, 2010.
[11] ZENG F, FENG Y, LIANG Z C, et al.Specific contact resistance measurements on C-Si solar cells by novel TLM method[C]//2012 IEEE 38th Photovoltaic Specialists Conference, Austin, USA, 2012.
[12] FELL A.A free and fast three-dimensional/two-dimensional solar dell simulator featuring conductive boundary and quasi-neutrality approximations[J]. IEEE transactions on electron devices, 2013, 60(2): 733-738.
[13] REICHEL C, FELDMANN F, MULLER R, et al.Interdigitated back contact silicon solar cells with tunnel oxide passivated contacts formed by ion implantation[C]//Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, Netherlands, 2014.
PDF(1761 KB)
