STUDY ON KINETICS AND MECHANISM OF LeTID IN P-TYPE POLYSILICON PERC SOLAR CELL

Ji Fangxu, Zhou Chunlan, Cheng Shangzhi, Wang He, Yu Xunzhe, Wang Wenjing

Acta Energiae Solaris Sinica ›› 2022, Vol. 43 ›› Issue (7) : 128-133.

PDF(2125 KB)
Welcome to visit Acta Energiae Solaris Sinica, Today is
PDF(2125 KB)
Acta Energiae Solaris Sinica ›› 2022, Vol. 43 ›› Issue (7) : 128-133. DOI: 10.19912/j.0254-0096.tynxb.2020-1094

STUDY ON KINETICS AND MECHANISM OF LeTID IN P-TYPE POLYSILICON PERC SOLAR CELL

  • Ji Fangxu1,2, Zhou Chunlan1,2, Cheng Shangzhi1,2, Wang He1,2, Yu Xunzhe1,2, Wang Wenjing1,2
Author information +
History +

Abstract

Light and elevated temperature degradation (LeTID) is a non-negligible phenomenon of efficiency degradation in silicon solar cell. However, the exact mechanism of the degradation and the evolution process of related defect still need to be clarified. In this paper, we analyzed the evolution of degradation and regeneration under different light intensity in p-type multi-crystalline silicon passivated emitter and rear contact (PERC) solar cell. It shows that illumination accelerates the degradation and the regeneration reaction, but the decrease in light intensity improves the degradation degree. The result shows that there are two main defects inducing SRH (Shockley-Read-Hall) recombination in the bulk of silicon during the degradation-regeneration cycle. The deep level defect dominants SRH recombination in the bulk with ratio of electron to hole capture cross-sections k in the range of 33<k<37, and the shallow level defect with less influence during the whole cycle may be Fe—B complex with k value between 0.1 and 1.

Key words

solar cells / polycrystalline silicon / degradation / carrier lifetime / light and elevated temperature degradation (LeTID) / PERC

Cite this article

Download Citations
Ji Fangxu, Zhou Chunlan, Cheng Shangzhi, Wang He, Yu Xunzhe, Wang Wenjing. STUDY ON KINETICS AND MECHANISM OF LeTID IN P-TYPE POLYSILICON PERC SOLAR CELL[J]. Acta Energiae Solaris Sinica. 2022, 43(7): 128-133 https://doi.org/10.19912/j.0254-0096.tynxb.2020-1094

References

[1] KERSTEN F, ENGELHART P, PLOIGT H C, et al.Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature[J]. Solar energy materials and solar cells, 2015, 142: 83-86.
[2] FERTIG F, LANTZSCH R, MOHR A, et al.Mass production of p-type Cz silicon solar cells approaching average stable conversion efficiencies of 22%[J]. Energy procedia, 2017, 124: 338-345.
[3] ZHOU C L, JI F X, CHENG S Z, et al.Light and elevated temperature induced degradation in B—Ga co-doped cast mono Si PERC solar cells[J]. Solar energy materials and solar cells, 2020, 211: 110508.
[4] SIO H C, WANG H T, WANG Q Z, et al.Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon[J]. Solar energy materials and solar cells, 2018, 182: 98-104.
[5] SEN C, CHAN C, HAMER P, et al.Eliminating light-and elevated temperature-induced degradation in p-type PERC solar cells by a two-step thermal process[J]. Solar energy materials and solar cells, 2020, 209: 110470.
[6] CHEN D, HAMER P G, KIM M, et al.Hydrogen-induced degradation: Explaining the mechanism behind light-and elevated temperature-induced degradation in n-and p-type silicon[J]. Solar energy materials and solar cells, 2020, 207: 110353.
[7] VARGAS C, ZHU Y, COLETTI G, et al.Recombination parameters of lifetime-limiting carrier-induced defects in multicrystalline silicon for solar cells[J]. Applied physics letters, 2017, 110(9): 092106.
[8] LEE S H, BHOPAL M F, LEE D W, et al.Review of advanced hydrogen passivation for high efficient crystalline silicon solar cells[J]. Materials science in semiconductor processing, 2018, 79: 66-73.
[9] LNGLESE A, LINDROOS J, VAHLMAN H, et al.Recombination activity of light-activated copper defects in p-type silicon studied by injection-and temperature-dependent lifetime spectroscopy[J]. Journal of applied physics, 2016, 120(12): 125703-122178.
[10] FUNG T H, KIM M, CHEN D, et al.Influence of bound hydrogen states on carrier-induced degradation in multi-crystalline silicon[J]. AIP conference proceedings, 2018, 1999(1): 130004.
[11] JAKOB F, ANNIKA Z, DANIEL S, et al.Impact of temperature and doping on LETID and regeneration in mc-Si[C] // 33rd European Photovoltaic Solar Energy Conference and Exhibition: EU PVSEC,Amsterdam,Netherlands, 2017: 569-572.
[12] 曾湘安,艾斌,邓幼俊,等. 硅片不同表面钝化工艺的稳定性研究[J]. 中山大学学报, 2014, 53(3): 14-18.
ZENG X A, AI B, DENG Y J, et al.Study on the stability of the silicon wafers passivated by different surface passivation processes[J]. Journal of Sun Yat-sen University, 2014, 53(3): 14-18.
[13] MURPHY J D, BOTHE K, KRAIN R, et al.Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of shockley-read-hall statistics: An application to oxide precipitates in silicon[J]. Journal of applied physics, 2012, 111(11): 113709.
[14] GREEN M A.Intrinsic concentration, effective densities of states, and effective mass in silicon[J]. Journal of applied physics, 1990, 67(6): 2944-2954.
[15] MORISHIGE A E, JENSEN M A, NEEDLEMAN D B, et al.Lifetime spectroscopy investigation of light-induced degradation in p-type multicrystalline silicon PERC[J]. IEEE journal of photovoltaics, 2016, 6(6): 1466-1472.
[16] REIN S, GLUNZ S W.Electronic properties of interstitial iron and iron-boron pairs determined by means of advanced lifetime spectroscopy[J]. Journal of applied physics, 2005, 98(11): 113711.
[17] FUNG T H, KIM M, CHEN D, et al.A four-state kinetic model for the carrier-induced degradation in multicrystalline silicon: Introducing the reservoir state[J]. Solar energy materials and solar cells, 2018, 184: 48-56.
[18] ZUNDEL T, WEBER J.Boron reactivation kinetics in hydrogenated silicon after annealing in the dark or under illumination[J]. Physical review B, 1991, 43(5): 4361.
[19] LEONARD S, MARKEVICH P, PEAKER A R, et al.Evidence for an iron-hydrogen complex in p-type silicon[J]. Applied physics letters, 2015, 107(3): 032103.
PDF(2125 KB)

Accesses

Citation

Detail

Sections
Recommended

/