Due to a large number of H atoms, the SiOxNy film prepared by PECVD has shown excellent surface passivation performance. By inserting a layer of SiOxNy film between the Al2O3/SiNx rear passivation structure of PERC solar cells, Al2O3/SiOxNy/SiNx is formed, which can avoid the negative effect of the fixed positive charge carried by SiNx on the negative charge field passivation effect of Al2O3. As a result, the silicon minority carrier lifetime increased from 130 μs to 162 μs, and the cell conversion efficiency increased by 0.09%. The LID of the PERC cell based on Al2O3/SiOxNy/SiNx rear passivation structure was also improved, decreasing from 1.83% in the control group to 1.09% in the experimental group.
Key words
PERC solar cells /
rear passivation /
SiOxNy /
LID /
laminated film /
field passivation
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