RADIATION-INDUCED DAMAGE MECHANISMS AND ON-ORBIT DEGRADATION PREDICTIONS FOR TRIPLE-JUNCTION SOLAR CELLS

Peng Chao

Acta Energiae Solaris Sinica ›› 2022, Vol. 43 ›› Issue (12) : 25-31.

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Acta Energiae Solaris Sinica ›› 2022, Vol. 43 ›› Issue (12) : 25-31. DOI: 10.19912/j.0254-0096.tynxb.2021-0733

RADIATION-INDUCED DAMAGE MECHANISMS AND ON-ORBIT DEGRADATION PREDICTIONS FOR TRIPLE-JUNCTION SOLAR CELLS

  • Peng Chao
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Abstract

Proton/electron irradiation experiments are carried out for triple-junction solar cells. The radiation damage sensitive region in triple-junction solar cell is identified, and the degradation model of electrical characteristics with the displacement damage dose (DDD) is established. Based on TCAD simulations, the degradation mechanisms of triple-junction solar cells after irradiation is studied and verified. Combined with Monte Carlo simulations and ground irradiation tests, the equivalent DDD method is used to predict the on-orbit performances of triple-junction solar cells. The on-orbit degradations of typical Chinese triple-junction solar cells in GEO and LEO orbits are calculated.

Key words

solar cells / radiation effects / GaAs / space applications / displacement damage / TCAD simulations

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Peng Chao. RADIATION-INDUCED DAMAGE MECHANISMS AND ON-ORBIT DEGRADATION PREDICTIONS FOR TRIPLE-JUNCTION SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2022, 43(12): 25-31 https://doi.org/10.19912/j.0254-0096.tynxb.2021-0733

References

[1] GONZALEZ M, ANDRE C L, WALTERS R J, et al.Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates[J]. Journal of applied physics, 2006, 100(3): 1-7.
[2] KHAN A, IQBAL M Z, QURASHI U S, et al.Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition[J]. Japanese journal of applied physics, 1998, 37(8): 4595-4602.
[3] DHARMARASU N, YAMAGUCHI M, BOURGOIN J C, et al.Majority-and minority-carrier deep level traps in proton-irradiated InGaP space solar cells[J]. Applied physics letters, 2002, 81(1): 64-66.
[4] SUGIMOTO H, TAJIMA M, HASE S, et al.Luminescence analysis of radiation effects in multi-junction solar cells for space[C]//Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, Lake Buena Vista, FL, USA, 2005: 830-833.
[5] ROMERO M J, ARAUJO D, GARCIA R, et al.Radiation-induced order-disorder transition in p+-n InGaP solar cells[J]. Applied physics letters, 1999, 74(18): 2684-2686.
[6] ZAZOUI M, BOURGOIN J C.Space degradation of multijunction solar cells: An electroluminescence study[J]. Applied physics letters, 2002, 80(23): 4455-4457.
[7] WANG R, LIU Y H, SUN X F.Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use[J]. Nuclear instruments and methods in physics research b, 2008, 266: 745-749.
[8] YANG S S, GAO X, WANG Z.Displacement damage characterization of electron radiation in triple-junction GaAs solar cells[J]. Journal of spacecraft and rockets, 2011, 48(1): 23-26.
[9] IMAIZUMI M, TAKAMOTO T, OHSHIMA T, et al.Radiaton effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use[C]//Conference record of the twenty-ninth IEEE Photovoltaic Specialists Conference, New Orleans, LA, USA, 2002: 990-993.
[10] 高欣, 杨生胜, 冯展祖, 等. 空间三结砷化镓太阳电池位移损伤效应研究[J]. 太阳能学报, 2020, 41(2): 290-295.
GAO X, YANG S S, FENG Z Z, et al.Study on displacement damage effects of space triple-junction GaAs solar cells[J]. Acta energiae solaris sinica, 2020, 41(2): 290-295.
[11] WEISS S, KASSING R.Deep level transient Fourier spectroscopy(DLTFS)—A technique for the analysis of deep level properties[J]. Solid-state electronics, 1988, 31(12): 1733-1742.
[12] WALTERS R, SUMMERS G P, WARNER J H, et al.Spenvis implementation of end-of-life solar cell calculations using the displacement damage dose methodology[R]. NASA/CP—2007-214494: 25-33.
[13] ANSPAUGH B E(National Aeronautics and Space Administration). GaAs solar cell radiation handbook[M]. [S.I.]JPL Publication, 1996: 96-99.
[14] 胡建民, 吴宜勇, 钱勇, 等. GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应[J]. 物理学报, 2009, 58(7): 5051-5056.
HU J M, WU Y Y, QIAN Y,et al.Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell[J]. Acta physica sinica, 2009, 58(7): 5051-5056.
[15] INGUIMBERT C, MESSENGER S.Equivalent displacement damage dose for on-orbit space applications[J]. IEEE transactions on nuclear science, 2012, 59(6): 3117-3125.
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