ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT

Du Mingxing; Xin Jinlei; Yao Wanrong; Ouyang Ziwei

doi:10.19912/j.0254-0096.tynxb.2021-1124

PDF(2040 KB)

Acta Energiae Solaris Sinica ›› 2023, Vol. 44 ›› Issue (2) : 445-452. DOI: 10.19912/j.0254-0096.tynxb.2021-1124

ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT

Du Mingxing¹, Xin Jinlei¹, Yao Wanrong², Ouyang Ziwei^1,3

Author information +

History +

Abstract

This paper studies the temperature dependence of threshold voltage, body diode voltage, drain-source on-state resistance in SiC MOSFET, analyzes the effect of bias temperature instability（BTI） on VTH, and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition, considering the influence of temperature and BTI on VTH, a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures （Tj） and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.

Key words

silicon carbide / power MOSFET / condition monitoring / temperature-sensitive electrical parameters / bias temperature instability

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

Du Mingxing, Xin Jinlei, Yao Wanrong, Ouyang Ziwei. ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT[J]. Acta Energiae Solaris Sinica. 2023, 44(2): 445-452 https://doi.org/10.19912/j.0254-0096.tynxb.2021-1124

References

[1] 王喜炜, 白建波, 宋昊, 等. 基于温度系数试验的光伏组件性能评估[J]. 太阳能学报, 2020, 41(7): 129-135.
WANG X W, BAI J B, SONG H, et al.Performance evaluation of photovoltaic modules based on temperature coefficient test[J]. Acta energiae solaris sinica, 2020, 41(7): 129-135.
[2] 王立乔, 刘乐, 李占一. 一种单级非隔离Buck-Boost新型光伏逆变器[J]. 太阳能学报, 2021, 42(3): 338-346.
WANG L Q, LIU L, LI Z Y.A Novel single-stage non-isolated Buck-Boost photovoltaic inverter[J]. Acta energiae solaris sinica, 2021, 42(3): 338-346.
[3] 廖兴林, 李辉, 黄樟坚, 等. 温度对SiC MOSFET电流和电压变化率影响分析[J]. 太阳能学报, 2019, 40(8): 2368-2375.
LIAO X L, LI H, HUANG Z J, et al.Analysis of effect of temperature on dI_D/dt and dV_DS/dt of SiC MOSFET[J]. Acta energiae solaris sinica, 2019, 40(8): 2368-2375.
[4] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665.
WANG L N, MA H B, YUAN K, et al.Modeling and influencing factor analysis of SiC MOSFET half-bridge circuit switching transient overcurrent and overvoltage[J]. Transactions of China Electrotechnical Society, 2020, 35(17): 3652-3665.
[5] JAHDI S, ALATISE O, ALEXAKIS P, et al.The impact of temperature and switching rate on the dynamic characteristics of silicon carbide Schottky barrier diodes and MOSFETs[J]. IEEE transactions on industrial electronics, 2015, 62(1): 163-171.
[6] CHBILI Z, MATSUDA A, CHBILI J, et al.Modeling early breakdown failures of gate oxide in SiC power MOSFETs[J]. IEEE transactions on electron devices,2016, 63(9): 3605-3613.
[7] PUSCHKARSKY K, GRASSER T, AICHINGER T, et al.Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability[J]. IEEE transactions on electron devices, 2019, 66(11): 4604-4616.
[8] AICHINGER T, RESCHER G, POBEGEN G.Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs[J]. Microelectronics reliability, 2018, 80:68-78.
[9] GONZALEZ J A O,ALATISE O. A Novel non-intrusive technique for BTI characterization in SiC MOSFETs[J]. IEEE transactions on power electronics, 2019, 34(6):5737-5747.
[10] LELIS A J, HABERSAT D, GREEN R, et al.Time dependence of bias-stress-induced threshold-voltage instability measurements[J]. IEEE transactions on electron devices, 2008, 55(8): 835-1840.
[11] BEIER-MOEBIUS M, LUTZ J.Breakdown of gate oxide of SiC-MOSFETs and Si-IGBTs under high temperature and high gate voltage[C]//International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2017: 1-8.
[12] GONZALEZ J O, ALATISE O.Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters[C]//2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 2018: 837-844.
[13] KARKI U, PENG F Z.Effect of gate-oxide degradation on electrical parameters of power MOSFETs[J]. IEEE transactions on power electronics, 2018, 33(12): 10764-10773.
[14] SUNDARAMOORTHY V K, BIANDA E, BLOCH R, et al.A study on IGBT junction temperature (T_j) online estimation using gate-emitter voltage (V_ge) at turn-off[J]. Microelectronics reliability, 2014, 54(11): 2423-2431.
[15] BALIGA B J.Fundamentals of power semiconductor devices[M]. Switzerland: Springer International Publishing AG, 2008.
[16] DU M X,XIN J L, WANG H B, et al.Estimating junction temperature of SiC MOSFET using its drain current during turn-on transient[J]. IEEE transactions on electron devices, 2020, 67(5): 1911-1918.
[17] VADASZ L,GROVE A S.Temperature dependence of MOS transistor characteristics below saturation[J]. IEEE transactions on electron devices, 1966, 13(12): 863-866.
[18] LUTZ J, SCHLANGENOTTO H, SCHEUERMANN U, et al.Semiconductor power devices: physics, characteristics,reliability[M]. Berlin, Germany: Springer-Verlag Berlin Heidelberg, 2018.
[19] DU M X, XIN J L, WANG H B, et al.Aging diagnosis of bond wire using on-state drain source voltage separation for SiC MOSFET[J]. IEEE transactions on device and materials reliability, 2021, 21(1): 41-47.
[20] WANG G Y, MOOKKEN J, RICE J, et al.Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications[C]//IEEE Applied Power Electronics Conference and Exposition-APEC, Fort Worth, TX, USA, 2014, 1478-1483.
[21] RESCHER G, POBEGEN G, AICHINGER T, et al.Preconditioned BTI on 4H-SiC: proposal for a nearly delay time-independent measurement technique[J]. IEEE transactions on electron devices, 2018, 65(4): 1419-1426.
[22] LUO H Z, IANNUZZO F, TURNATURI M.Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules[J]. IEEE journal of emerging and selected topics in power electronics, 2020, 8(2): 1657-1667.