COMPENSATION EFFECT RESEARCH OF OPPOSITE POLARITY IMPURITY IN SILICON INGOT

Liu Zhendong; Li Zhitao; Gao Qianqian; Liu Ruizhu

doi:10.19912/j.0254-0096.tynxb.2021-1435

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Acta Energiae Solaris Sinica ›› 2023, Vol. 44 ›› Issue (4) : 414-419. DOI: 10.19912/j.0254-0096.tynxb.2021-1435

COMPENSATION EFFECT RESEARCH OF OPPOSITE POLARITY IMPURITY IN SILICON INGOT

Liu Zhendong^1,2, Li Zhitao¹, Gao Qianqian¹, Liu Ruizhu²

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Abstract

The Scheil equation, four-probe method, Hall effect technology, ultraviolet-visible light absorption spectroscopy, and XRD technique are employed to simulate and test the impurity distribution, resistivity, carrier concentration, band gap and crystal structure of solar-grade silicon ingot, respectively. The results show that if the atomic concentration of the donor impurity in silicon material is less than 0.39 times that of the acceptor impurity, the casted p-type silicon ingots do not occur the polarity inversion. Due to the compensation effect between the impurities of opposite polarity, the p-n junction region in which both the minority carrier lifetime and bulk resistivity reach the maximum value, is formed in the polarity inversion region of the silicon ingot. Meanwhile, the crystal structure of the ingot does not be changed, and the band gap is decreased by 25.89% compared with the characteristic silicon ingot. For the polarity inversion region of silicon ingot, subsequent “phosphorus diffusion”process of the as-cut silicon wafers can be omitted. Employing the techniques of dopant compensation can fabricate high efficiency and low-cost silicon solar cells.

Key words

solar cells / carrier mobility / minority carrier lifetime / compensation effect / Scheil equation / solar-grade silicon

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Liu Zhendong, Li Zhitao, Gao Qianqian, Liu Ruizhu. COMPENSATION EFFECT RESEARCH OF OPPOSITE POLARITY IMPURITY IN SILICON INGOT[J]. Acta Energiae Solaris Sinica. 2023, 44(4): 414-419 https://doi.org/10.19912/j.0254-0096.tynxb.2021-1435

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