PERFORMANCE DEGRADATION ANALYSIS OF TRIPLE JUNCTION GaAs SOLAR CELLS UNDER PROTON IRRADIATION

Sun Hongwei; Hao Jianhong; Zhao Qiang; Fan Jieqing; Zhang Fang; Dong Zhiwei

doi:10.19912/j.0254-0096.tynxb.2022-0350

PDF(1681 KB)

Acta Energiae Solaris Sinica ›› 2023, Vol. 44 ›› Issue (7) : 129-134. DOI: 10.19912/j.0254-0096.tynxb.2022-0350

PERFORMANCE DEGRADATION ANALYSIS OF TRIPLE JUNCTION GaAs SOLAR CELLS UNDER PROTON IRRADIATION

Sun Hongwei¹, Hao Jianhong¹, Zhao Qiang², Fan Jieqing¹, Zhang Fang², Dong Zhiwei²

Author information +

History +

Abstract

The irradiation simulation analysis of protons with different energy for three junction GaAs solar cells is of great significance to the on orbit service evaluation of the cells. In this study, a three junction GaAs solar cell model is constructed, and the performance degradation of the cell under proton irradiation with different energy is simulated; Combined with the interaction between proton and battery target, a battery irradiation damage evaluation method combining micro damage mechanism with macro battery performance change was established. The results show that in the three junction GaAs battery, the proton irradiation with 70 keV energy has the greatest influence on the junction region of the battery, resulting in the most obvious changes in quantum efficiency QE and parallel resistance. Proton irradiation with 40 keV energy has the least impact on the medium battery, while proton irradiation with 100 keV and 150 keV energy mainly affects the base area of the medium battery, resulting in the most obvious change of series resistance of the battery.

Key words

solar cells / proton irradiation / GaAs / quantum efficiency / lattice defect

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

Sun Hongwei, Hao Jianhong, Zhao Qiang, Fan Jieqing, Zhang Fang, Dong Zhiwei. PERFORMANCE DEGRADATION ANALYSIS OF TRIPLE JUNCTION GaAs SOLAR CELLS UNDER PROTON IRRADIATION[J]. Acta Energiae Solaris Sinica. 2023, 44(7): 129-134 https://doi.org/10.19912/j.0254-0096.tynxb.2022-0350

References

[1] 沈宏君, 张瑞, 张天耀. 一种异型布拉格背反射结构的多晶硅薄膜太阳电池光吸收分析[J]. 太阳能学报, 2015, 36(5): 1141-1144.
SHEN H J, ZHANG R, ZHANG T Y.Absorption analysis of polycrstalline silicon thin film solar cell consisting of irregularly shaped DBR[J]. Acta energiae solaris sinica, 2015, 36(5): 1141-1144.
[2] 唐欣欣, 罗文芸, 王朝壮, 等. 低能质子在半导体材料Si和GaAs中的非电离能损研究[J]. 物理学报, 2008, 57(2): 1266-1270.
TANG X X, LUO W Y, WANG C Z, et al.Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs[J]. Acta physica sinica, 2008, 57(2); 1266-1270.
[3] 占芬芬. 质子辐照GaAs/AlGaAs太阳能电池电学特性研究[D]. 上海: 复旦大学, 2009.
ZHAN F F.Study of defects in proton irradiated GaAs/AlGaAs solar cells[D]. Shanghai: Fudan University, 2009.
[4] WARNER J H, MAXIMENKO S I, MESSENGER S R, et al.Electrical characterization of electron and proton-induced defects in p+n GaAs photodiodes: EBIC study[C]//2010 35th IEEE Photovoltaic Specialists Conference, Honolulu, HI, USA, 2010.
[5] AIERKEN A, FANG L, HEINI M,et al.Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells[J]. Solar energy materials and solar cells: an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, 2018, 185: 36-44.
[6] 高欣, 杨生胜, 冯展祖, 等. 空间三结砷化镓太阳电池位移损伤效应研究[J]. 太阳能学报, 2020, 41(2): 290-295.
GAO X,YANG S S,FENG Z Z,et al.Study on displacement damage effects of space triple-junction gaas solar cells[J]. Acta energiae solaris sinica, 2020, 41(2): 290-295.
[7] GEE J M.A comparison of different module configurations for multi-band-gap solar cells[J]. Solar cells, 1988, 24(1-2): 147-155.
[8] 李俊炜, 王祖军, 石成英, 等. GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟[J]. 物理学报, 2020, 69(9): 295-305.
LI J W, WANG Z J, SHI C, et al.Modeling and simulating of radiation effects on the performance degradation of GaInP/GaAs/Ge triple-junction solar cells induced by different energy protons[J]. Acta physica sinica, 2020, 69(9): 295-305.
[9] 白雨蓉, 贺朝会, 谢飞, 等. Geant4模拟质子入射InP产生的位移损伤[J]. 太赫兹科学与电子信息学报, 2021, 19(1): 176-180.
BAI Y R, HE C H, XIE F, et al.Geant4 simulation of displacement damage induced by proton irradiation in InP[J]. Journal of terahertz science and electronic information technology, 2021, 19(1): 176-180.
[10] INGUIMBERT C, MESSENGER S.Equivalent displacement damage dose for on-orbit space applications[J]. IEEE transactions on nuclear science, 2013, 59(6): 3117-3125.
[11] PRIYANKA, LAL M, SINGH S N.A new method of determination of series and shunt resistances of silicon solar cells[J]. Solar energy materials & solar cells, 2007, 91(2-3): 137-142.
[12] KAMINSKI A, MARCHAND J J, FAVE A, et al.New method of parameters extraction from dark I-V curve[C]//Twenty-Sixth IEEE Photovoltaic Specialists Conference, IEEE: Anaheim, CA, USA, 1997.
[13] DATTA S K, MUKHOPADHYAY K, BANDOPADHYAY S, et al.An improved technique for the determination of solar cell parameters[J]. Solid-state electronics, 1992, 35(11): 1667-1673.
[14] 于乐. 基于模型预测控制的光伏并网发电系统控制策略的研究[D]. 沈阳: 东北大学, 2013.
YU L.Research on control strategy for grid-connected photovoltaic generation system based on model predictive control[D]. Shenyang: Northeastern University, 2013.
[15] 郭宏亮. 高效三结GaAs太阳电池辐照损伤效应研究及仿真分析[D]. 哈尔滨: 哈尔滨工业大学, 2015.
GUO H L.Damage effects and simulation on high efficiency Tj-GaAs solar cells under radiation environment[D]. Harbin: Harbin Institute of Technology, 2015.
[16] 岳龙, 吴宜勇, 张延清, 等. 质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响[J]. 物理学报, 2014, 63(18): 442-448.
YUE L, WU Y Y, ZHANG Y Q, et al.Effect of irradiation damage on the dark electric properties of single junction GaAs/Ge solar cells[J]. Acta physica sinica, 2014, 63(18): 442-448.