A STATIC CURRENT SHARING METHOD FOR PARALLELED SiC MOSFETS

Liu Xingyu; Du Mingxing; Yin Jinliang; Ouyang Ziwei

doi:10.19912/j.0254-0096.tynxb.2022-0433

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Acta Energiae Solaris Sinica ›› 2023, Vol. 44 ›› Issue (7) : 147-154. DOI: 10.19912/j.0254-0096.tynxb.2022-0433

A STATIC CURRENT SHARING METHOD FOR PARALLELED SiC MOSFETS

Liu Xingyu¹, Du Mingxing¹, Yin Jinliang¹, Ouyang Ziwei²

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Abstract

In high current applications such as photovoltaic power generation or wind power generation, due to the static unbalanced current resulting from the mismatch between the power source parasitic inductances and that between the drain parasitic inductances respectively, a static current sharing method for paralleled SiC MOSFETs is proposed in this paper. This paper analyses and solves the problem of the dynamic unbalanced current resulting from the mismatched threshold voltage firstly. And then the problem of the dynamic unbalanced current caused by the mismatched source parasitic inductance is solved on the basis above. Finally, the problem of the static unbalanced current caused by the mismatched drain parasitic inductance is solved on the basis that there is no the dynamic unbalanced current caused by the mismatched threshold voltage and the mismatched source parasitic inductance. The effectiveness of the static current sharing method proposed in this paper is verified by experiments.

Key words

silicon carbide / static analysis / dynamic analysis / parasitic inductance / current sharing

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Liu Xingyu, Du Mingxing, Yin Jinliang, Ouyang Ziwei. A STATIC CURRENT SHARING METHOD FOR PARALLELED SiC MOSFETS[J]. Acta Energiae Solaris Sinica. 2023, 44(7): 147-154 https://doi.org/10.19912/j.0254-0096.tynxb.2022-0433

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