AGING MONITORING METHOD OF SOLDER LAYER OF IGBT MODULE BASED ON DUAL-BRANCH CAUER MODEL

Liu Xueting; Du Mingxing; Ma Ge; Yin Yidi

doi:10.19912/j.0254-0096.tynxb.2022-1544

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Acta Energiae Solaris Sinica ›› 2024, Vol. 45 ›› Issue (2) : 336-341. DOI: 10.19912/j.0254-0096.tynxb.2022-1544

AGING MONITORING METHOD OF SOLDER LAYER OF IGBT MODULE BASED ON DUAL-BRANCH CAUER MODEL

Liu Xueting, Du Mingxing, Ma Ge, Yin Yidi

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Abstract

The solder layer of insulated gate bipolar junction transistor （IGBT） is selected as the research object. Based on the traditional Cauer model, the dual-branch Cauer model considering chip-copper terminal heat flow branch was proposed. The temperature of copper terminal exposed outside the IGBT module and the temperature of IGBT module baseplate were measured by optical fiber temperature sensor to obtain the IGBT chip junction temperature. By analyzing the changes of chip junction temperature, copper terminal temperature and baseplate temperature, the aging position of the solder layer is accurately located, the chip solder layer aging and baseplate solder layer aging is effectively distinguished.

Key words

insulated gate bipolar transistor / condition monitoring / finite element analysis / solder layer aging / Cauer thermal network model

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Liu Xueting, Du Mingxing, Ma Ge, Yin Yidi. AGING MONITORING METHOD OF SOLDER LAYER OF IGBT MODULE BASED ON DUAL-BRANCH CAUER MODEL[J]. Acta Energiae Solaris Sinica. 2024, 45(2): 336-341 https://doi.org/10.19912/j.0254-0096.tynxb.2022-1544

References

[1] 杨涛. 电力电子技术在新能源发电领域中的应用[J]. 电子世界, 2020(8): 169-170.
YANG T.Application of power electronics technology in the field of new energy power generation[J]. Electronics world, 2020(8): 169-170.
[2] 姚芳, 胡洋, 李铮, 等. 风电变流器IGBT瞬态电热特性测试及其应用研究[J]. 太阳能学报, 2018, 39(2): 369-376.
YAO F, HU Y, LI Z, et al.Transient electrothermal characteristic test and application research of IGBT in wind power converter[J]. Acta energiae solaris sinica, 2018, 39(2): 369-376.
[3] 施建根, 孙伟锋, 景伟平, 等. 车载IGBT器件封装装片工艺中空洞的失效研究[J]. 电子与封装, 2010, 10(2): 23-27.
SHI J G, SUN W F, JING W P, et al.Failure analysis of voids in automotive IGBT die attach process[J]. Electronics & packaging, 2010, 10(2): 23-27.
[4] 陈民铀, 高兵, 杨帆, 等. 基于电-热-机械应力多物理场的IGBT焊料层健康状态研究[J]. 电工技术学报, 2015, 30(20): 252-260.
CHEN M Y, GAO B, YANG F, et al.Healthy evaluation on IGBT solder based on electro-thermal-mechanical analysis[J]. Transactions of China Electrotechnical Society, 2015, 30(20): 252-260.
[5] HUANG Y L, LUO Y F, XIAO F, et al.Physics of failure of die-attach joints in IGBTs under accelerated aging: evolution of micro-defects in lead-free solder alloys[J]. Microelectronics reliability, 2020, 109: 113637.
[6] SISWANTO W A, ARUN M, KRASNOPEVTSEVA I V, et al.A competition between stress triaxiality and joule heating on microstructure evolution and degradation of SnAgCu solder joints[J]. Journal of manufacturing processes, 2020, 54: 221-227.
[7] LE V N, BENABOU L, ETGENS V, et al.Finite element analysis of the effect of process-induced voids on the fatigue lifetime of a lead-free solder joint under thermal cycling[J]. Microelectronics reliability, 2016, 65: 243-254.
[8] MASANA F N.A new approach to the dynamic thermal modelling of semiconductor packages[J]. Microelectronics reliability, 2001, 41(6): 901-912.
[9] RAMOS-ALVARADO B, BROWN D, CHEN X P, et al.On the assessment of voids in the thermal interface material on the thermal performance of a silicon chip package[J]. Microelectronics reliability, 2013, 53(12): 1987-1995.
[10] 陈建业. 大功率电力电子装置冷却系统的原理与应用[J]. 国际电力, 2002, 6(4): 48-52.
CHEN J Y.A discussion on cooling systems of high power electronic equipment[J]. International electric power for China, 2002, 6(4): 48-52.
[11] 孙海峰, 杨舒曼. 焊料层空洞对绝缘栅双极型晶体管(IGBT)模块温度分布的影响[J]. 科学技术与工程, 2018, 18(32): 189-194.
SUN H F, YANG S M.Influence of solder void on temperature distribution of insulated gate bipolar transistor(IGBT) module[J]. Science technology and engineering, 2018, 18(32): 189-194.