RESEARCH ON ELECTRON SELECTIVE CONTACT OF TOPCon SOLAR CELLS

Ye Haoran; He Jialong; Chen Yang; Su Rong; Chen Tao; Yu Jian

doi:10.19912/j.0254-0096.tynxb.2022-1689

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Acta Energiae Solaris Sinica ›› 2024, Vol. 45 ›› Issue (2) : 475-479. DOI: 10.19912/j.0254-0096.tynxb.2022-1689

RESEARCH ON ELECTRON SELECTIVE CONTACT OF TOPCon SOLAR CELLS

Ye Haoran¹, He Jialong¹, Chen Yang¹, Su Rong², Chen Tao¹, Yu Jian¹

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Abstract

Through Afors-Het simulation software, the TOPCon solar cell model is established and the effects of tunneling through the oxide SiO₂ layer thickness, n⁺ poly-Si layer doping concentration, back-metal electrode work function and energy band offset of the SiO₂/n⁺ poly-Si side on the performance of TOPCon solar cells are systematically analyzed. The simulation results show that the SiO₂/n⁺ poly-Si stacked passivation structure can achieve better electron selective transport performance. It is the best process window when the thickness of the SiO₂ layer is 1.1 nm and the doping concentration of the n⁺ poly-Si layer is 1×10²⁰ cm^-3. It also shows the great potential of improving the electron selective transport layer for the efficiency improvement of TOPCon solar cells.

Key words

solar cells / passivation / electronic properties / simulation platform / TOPCon

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Ye Haoran, He Jialong, Chen Yang, Su Rong, Chen Tao, Yu Jian. RESEARCH ON ELECTRON SELECTIVE CONTACT OF TOPCon SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2024, 45(2): 475-479 https://doi.org/10.19912/j.0254-0096.tynxb.2022-1689

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