STUDY ON PERFORMANCE OF IN-SITU DOPED POLYSILICON PREPARED BY TUBE PECVD

Huang Jiabin; Zhao Zengchao; Li Ming; Chen Jun; Deng Xinxin; Zhou Xiaorong

doi:10.19912/j.0254-0096.tynxb.2023-0251

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Acta Energiae Solaris Sinica ›› 2024, Vol. 45 ›› Issue (6) : 334-340. DOI: 10.19912/j.0254-0096.tynxb.2023-0251

STUDY ON PERFORMANCE OF IN-SITU DOPED POLYSILICON PREPARED BY TUBE PECVD

Huang Jiabin, Zhao Zengchao, Li Ming, Chen Jun, Deng Xinxin, Zhou Xiaorong

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Abstract

The effects of deposition parameters of tube plasma enhanced chemical vapor deposition （PECVD） on the heavily doped polysilicon passivated contact （SiO_x/Poly-Si（n⁺）） of silicon solar cells are reported. The doped polysilicon of TOPCon solar cells is achieved by high temperature crystallization of deposited amorphous silicon. a-Si （n⁺） films with different thickness, crystallinity and doping concentration can be obtained by changing the deposition temperature, the flow rate of Ar and PH₃, deposition RF power and other deposition parameters of PECVD. Then different Poly-Si（n⁺） films are obtained by annealing at high temperature, resulting in different characteristics of SiO_x/Poly-Si（n⁺） passivated contact in terms of passivating quality and carrier selectivity. Finally, under the deposition temperature of 480 °C, Ar flow rate of 8 L/min, PH₃ flow rate of 0.8 L/min, deposition RF power of 12000 W, annealing temperature of 920℃, the optimal double-side SiO_x/Poly-Si（n⁺）/SiN_x passivated contact is obtained. The minority lifetime reaches to 6445 μs, the implied open circuit voltage （iV_oc） reaches to 742.7 mV, and the single-side saturation current density J₀ is as low as 4.2 fA/cm².

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silicon solar cells / passivation / polycrystalline silicon / doping / plasma enhanced chemical vapor deposition

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Huang Jiabin, Zhao Zengchao, Li Ming, Chen Jun, Deng Xinxin, Zhou Xiaorong. STUDY ON PERFORMANCE OF IN-SITU DOPED POLYSILICON PREPARED BY TUBE PECVD[J]. Acta Energiae Solaris Sinica. 2024, 45(6): 334-340 https://doi.org/10.19912/j.0254-0096.tynxb.2023-0251

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