PACKAGING AGING MONITORING BASED ON EMR AND VeE_peak COMBINED ELECTRICAL PARAMETERS IN IGBT MODULE

Dong Chao; Wei Hujun; Yin Jinliang; Du Mingxing

doi:10.19912/j.0254-0096.tynxb.2023-1028

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Acta Energiae Solaris Sinica ›› 2024, Vol. 45 ›› Issue (11) : 1-8. DOI: 10.19912/j.0254-0096.tynxb.2023-1028

PACKAGING AGING MONITORING BASED ON EMR AND V_{eE_peak} COMBINED ELECTRICAL PARAMETERS IN IGBT MODULE

Dong Chao, Wei Hujun, Yin Jinliang, Du Mingxing

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Abstract

A method is proposed for the packaging aging of IGBT modules to be monitored, based on the combination of EMR and V_{eE_peak} electrical parameters, with the aim of the health status of IGBT modules being monitored when multiple aging events occur simultaneously. Firstly, the generation mechanism of V_{eE_peak} and radiated interference signal （EMR） and the influence of parasitic parameters inside the module on V_eE and EMR were analyzed. Secondly, the impact of bond wire lift-off and solder layer voids on the internal parasitic parameters of IGBT modules is analyzed. Finally, the feasibility of this method was verified through experiments. This is a non-invasive monitoring method that does not require complex monitoring circuits, which can effectively reduce the errors caused by various aging coupling on the health status monitoring results of IGBT modules.

Key words

solder layer void / IGBT module / bonding wires aging / electromagnetic radiation interference / V_{eE_peak}

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Dong Chao, Wei Hujun, Yin Jinliang, Du Mingxing. PACKAGING AGING MONITORING BASED ON EMR AND V_{eE_peak} COMBINED ELECTRICAL PARAMETERS IN IGBT MODULE[J]. Acta Energiae Solaris Sinica. 2024, 45(11): 1-8 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1028

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