RESEARCH ON ADAPTIVE VARIABLE RESISTANCE ACTIVE DRIVE CIRCUIT FOR OPTIMIZING IGBT SWITCHING PERFORMANCE

Zhou Jiamin; Huang Liansheng; Chen Xiaojiao; Dou Sheng; He Shiying; Zhang Xiuqing

doi:10.19912/j.0254-0096.tynxb.2023-1300

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Acta Energiae Solaris Sinica ›› 2024, Vol. 45 ›› Issue (12) : 132-138. DOI: 10.19912/j.0254-0096.tynxb.2023-1300

RESEARCH ON ADAPTIVE VARIABLE RESISTANCE ACTIVE DRIVE CIRCUIT FOR OPTIMIZING IGBT SWITCHING PERFORMANCE

Zhou Jiamin¹, Huang Liansheng², Chen Xiaojiao², Dou Sheng³, He Shiying², Zhang Xiuqing²

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Abstract

A novel adaptive active gate driving circuit （NAAGD） is proposed for current and voltage oscillations during IGBT turn-on. The circuit combines the voltage and current information of the complementary IGBT to switch on the drive resistor, which can realize the suppression of the open-pass current and voltage oscillation, and can adapt to the change of voltage and current level. Compared with the existing Active Gate Drive （AGD） scheme, the adaptive response of NAAGD has better immediacy. At the same time, compared with the conventional Gate Drive （CGD）, the method of increasing the drive resistance to suppress oscillation is optimized, and the turn-on loss is optimized. Experiments verify the effectiveness of the proposed NAAGD.

Key words

insulated gate bipolar transistor （IGBT） / adaptive / loss / active gate drive （AGD） / oscillation

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Zhou Jiamin, Huang Liansheng, Chen Xiaojiao, Dou Sheng, He Shiying, Zhang Xiuqing. RESEARCH ON ADAPTIVE VARIABLE RESISTANCE ACTIVE DRIVE CIRCUIT FOR OPTIMIZING IGBT SWITCHING PERFORMANCE[J]. Acta Energiae Solaris Sinica. 2024, 45(12): 132-138 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1300

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