CHARACTERIZATION AND COMPARISON RESEARCH OF NOVEL HYBRID SWITCH WITH SI IGBT AND SIC FET IN PARALLEL

Zhu Zixian; Tu Chunming; Xiao Biao; Guo Qi; Xiao Fan; Long Liu

doi:10.19912/j.0254-0096.tynxb.2023-1424

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (1) : 251-260. DOI: 10.19912/j.0254-0096.tynxb.2023-1424

CHARACTERIZATION AND COMPARISON RESEARCH OF NOVEL HYBRID SWITCH WITH SI IGBT AND SIC FET IN PARALLEL

Zhu Zixian, Tu Chunming, Xiao Biao, Guo Qi, Xiao Fan, Long Liu

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Abstract

In this paper, a novel hybrid switch（HY_F） composed of SiC FET and Si IGBT in parallel is studied. Firstly, the basic structure and working principle of HY_F are analyzed, and the conduction loss model, turn-on loss model and turn-off loss model are built. Secondly, based on the simulation model of the hybrid switch, the advantages and disadvantages of the loss and cost of HY_F and conventional Si IGBT/Si MOSFET hybrid switch（HY_M） at different rated current levels are analyzed. The simulation results show that HY_M can achieve lower loss at lower cost when the rated current is small（15 A）, HY_F can achieve lower loss at lower cost when the rated current of hybrid switches is large （25 A, 40 A）. Finally, the correctness of the conclusions is verified experimentally.

Key words

Si/SiC hybrid switch / SiC MOSFET / Si IGBT / SiC FET / loss model

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Zhu Zixian, Tu Chunming, Xiao Biao, Guo Qi, Xiao Fan, Long Liu. CHARACTERIZATION AND COMPARISON RESEARCH OF NOVEL HYBRID SWITCH WITH SI IGBT AND SIC FET IN PARALLEL[J]. Acta Energiae Solaris Sinica. 2025, 46(1): 251-260 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1424

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