MEARSUREMENT OF ELECTRON CONTACT RESISTIVITY OF CRYSTAL SILICON HETEROJUNCTION （HJT） SOLAR CELLS

Wu Jian; Li Shuo

doi:10.19912/j.0254-0096.tynxb.2023-1434

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (1) : 609-614. DOI: 10.19912/j.0254-0096.tynxb.2023-1434

MEARSUREMENT OF ELECTRON CONTACT RESISTIVITY OF CRYSTAL SILICON HETEROJUNCTION （HJT） SOLAR CELLS

Wu Jian^1-3, Li Shuo²

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Abstract

For solar cells, low enough contact resistivity is a key parameter for achieving high conversion efficiency, especially for carrier selective contact structures such as crystalline silicon heterojunction （HJT） solar cells. Contact resistivity ρc is usually calculated by Cox Strack method （CSM） or Transfer Length Method （TLM）. It is necessary to use some specific metal electrode patterns with either of the methods, which is difficult for real solar cell devices. For silicon heterojunction （HJT） solar cells, contact resistivity ρc consists of the silver electrode and ITO contact resistivity ρc1 and the tunneling contact resistivity ρc2 of ITO with p-or n-type doped amorphous silicon. Therefore, it is necessary to use different specific structures for accurate measurement of ρc1 and ρc2. In this article, we propose a new TLM method using which we could simultaneously measures the electrons contact resistivity between silver electrodes and ITO ρc1, as well as between ITO and n-type doped amorphous silicon ρc2 on actual HJT solar cell devices. The electrons contact resistivity value for ρc2 is 2.5-3.1 mΩ•cm², and the electron tunneling contact resistivity ρc2 value is 21-24 mΩ•cm², which are quite consistent with literature reports.

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silicon solar cells / heterojunctions / contact resistance / tunneling contact / electron

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Wu Jian, Li Shuo. MEARSUREMENT OF ELECTRON CONTACT RESISTIVITY OF CRYSTAL SILICON HETEROJUNCTION （HJT） SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2025, 46(1): 609-614 https://doi.org/10.19912/j.0254-0096.tynxb.2023-1434

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