INFLUENCE OF BACK INTERFACE RECOMBINATION ON LECTRICAL PERFORMANCE OF BIFACIAL SEMITRANSPARENT ULTRATHIN Cu（In,Ga）Se2 SOLAR CELLS

Xu Baoliang; Li Hangyu; Tu Ye; Yin Guanchao

doi:10.19912/j.0254-0096.tynxb.2024-0158

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (5) : 355-361. DOI: 10.19912/j.0254-0096.tynxb.2024-0158

INFLUENCE OF BACK INTERFACE RECOMBINATION ON LECTRICAL PERFORMANCE OF BIFACIAL SEMITRANSPARENT ULTRATHIN Cu（In,Ga）Se₂ SOLAR CELLS

Xu Baoliang, Li Hangyu, Tu Ye, Yin Guanchao

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Abstract

The influence of back interface recombination on the performance of ultrathin CIGSe solar cells under rear and bifacial illumination is theoretically investigated. And it shows that there exists a trade-off between two contradictory electrical effects, namely back interface recombination and hole transport, caused by increasing S_b. The results show that more photogenerated carriers are generated near the back interface under rear and bifacial illumination, leading to the fact that the back recombination of photogenerated electrons is particularly important to cell performance. The dominant back recombination of photogenerated electrons is observed under rear illumination, so a back interface passivation is beneficial to cell efficiency. This poses a sharp contrast to the trend of cell efficiency under front illumination where enhancing S_b can improve cell efficiency. Under bifacial illumination, as the intensity of rear illumination increases, the loss due to the back recombination of photogenerated electrons surpasses the gain from the hole transport effect with the increase of S_b. Thus, the improvement of cell efficiency in high S_b is moderate. The introduction of a forward absorber gradient band gap mitigates the back recombination of photogenerated electrons under bifacial illumination and enhances cell performance significantly.

Key words

ultrathin CIGSe solar cells / bifacial illumination / Sschottky barrier / back interface recombination / hole transport

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Xu Baoliang, Li Hangyu, Tu Ye, Yin Guanchao. INFLUENCE OF BACK INTERFACE RECOMBINATION ON LECTRICAL PERFORMANCE OF BIFACIAL SEMITRANSPARENT ULTRATHIN Cu（In,Ga）Se₂ SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2025, 46(5): 355-361 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0158

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