AGING MONITORING METHOD FOR IGBT MODULE BONDING WIRE BASED ON CROSSTALK VOLTAGE PEAK

Zhang Shuo; Wang Gengji; Yin Jinliang; Du Mingxing

doi:10.19912/j.0254-0096.tynxb.2024-0205

PDF(2723 KB)

Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (6) : 314-320. DOI: 10.19912/j.0254-0096.tynxb.2024-0205

AGING MONITORING METHOD FOR IGBT MODULE BONDING WIRE BASED ON CROSSTALK VOLTAGE PEAK

Zhang Shuo, Wang Gengji, Yin Jinliang, Du Mingxing

Author information +

History +

Abstract

To address the issue of bond wires aging in IGBT, a monitoring method based on the crosstalk vdtage peak is proposed. The half bridge circuit composed of IGBT modules is taken as the research object by this method. Based on the switching mode of IGBT modules, the mechanism of bond wire detachment and the process of crosstalk voltage generation are analyzed in detail, and the crosstalk voltage is segmented and modeled. The impact of wire detachment on the formation of crosstalk voltage at various stages has been derived, and real-time monitoring of the health status of IGBT module bond wires is achieved by measuring the peak value of crosstalk voltage. The simulation and experimental results have verified the feasibility and accuracy of this method.

Key words

Photovoltaic power generation / insulated gate bipolar transistors（IGBT） / crosstalk / inverters / bond wires / aging

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

Zhang Shuo, Wang Gengji, Yin Jinliang, Du Mingxing. AGING MONITORING METHOD FOR IGBT MODULE BONDING WIRE BASED ON CROSSTALK VOLTAGE PEAK[J]. Acta Energiae Solaris Sinica. 2025, 46(6): 314-320 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0205

References

[1] 曹娜, 李文强, 于群. 数字控制三相并网逆变器改进离散模型[J]. 太阳能学报, 2020, 41(4): 357-365.
CAO N, LI W Q, YU Q.Improved discrete-time model of digital controlled three-phase grid-connected inverter[J]. Acta energiae solaris sinica, 2020, 41(4): 357-365.
[2] JUNG S, BAE Y, CHOI S, et al.A low cost utility interactive inverter for residential fuel cell generation[J]. IEEE transactions on power electronics, 2007, 22(6): 2293-2298.
[3] 杜明星, 边维国, 欧阳紫威. 考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法[J]. 太阳能学报, 2023, 44(1): 16-23.
DU M X,BIAN W G,OUYANG Z W.Crosstalk peak prediction method for half-bridge circuit of SiC MOSFET considering parasitic inductance[J]. Acta energiae solaris sinica, 2023, 44(1): 16-23.
[4] JI B, PICKERT V, CAO W P, et al.In situ diagnostics and prognostics of wire bonding faults in IGBT modules for electric vehicle drives[J]. IEEE transactions on power electronics, 2013, 28(12): 5568-5577.
[5] WEI K X, DU M X, XIE L L, et al.Study of bonding wire failure effects on external measurable signals of IGBT module[J]. IEEE transactions on device and materials reliability, 2014, 14(1): 83-89.
[6] LUO J, GUAN S K, WAN B, et al.Research on IGBT bonding wires crack propagation at the macro and micro scales[J]. IEEE access, 2021, 9: 106270-106282.
[7] HUANG Q, PENG C, ELLEN S F, et al.A finite element analysis on the reliability of heavy bonding wire for high-power IGBT module[J]. IEEE transactions on components, packaging and manufacturing technology, 2021, 11(2): 212-221.
[8] YANG Y Y, ZHANG P J.In situ insulated gate bipolar transistor junction temperature estimation method via a bond wire degradation independent parameter turn-OFF VCE overshoot[J]. IEEE transactions on industrial electronics, 2021, 68(10): 10118-10129.
[9] YANG Y Y, ZHANG P J.A novel bond wire fault detection method for IGBT modules based on turn-on gate voltage overshoot[J]. IEEE transactions on power electronics, 2021, 36(7): 7501-7512.
[10] CHU C P, DONG C, DU M X, et al.Aging monitoring of bond wires based on differential mode conducted interference spectrum for IGBT module[J]. IEEE transactions on electromagnetic compatibility, 2021, 63(4): 1274-1283.
[11] CHU C P, DONG C, HU J, et al.Aging monitoring method of bond wires-based on phase-frequency characteristics of differential mode conducted interference signal for IGBT module[J]. IEEE transactions on device and materials reliability, 2021, 21(4): 639-646.
[12] ZHANG W Y, QI L, JI B, et al.In situ diagnosis of multisite wire bonding failures for multichip IGBT power modules based on crosstalk voltage[J]. IEEE transactions on components, packaging and manufacturing technology, 2023, 13(7): 935-944.
[13] 杜明星. 功率器件状态监测的关键问题研究[D]. 天津: 天津大学, 2012.
DU M X.Research on key issues of power device state monitoring[D]. Tianjin: Tianjin University, 2012.
[14] 王莉娜, 马浩博, 袁恺, 等. SiC MOSFET半桥电路开关瞬态过电流、过电压建模与影响因素分析[J]. 电工技术学报, 2020, 35(17): 3652-3665.
WANG L N, MA H B, YUAN K, et al.Modeling and influencing factor analysis of SiC MOSFET half-bridge circuit switching transient overcurrent and overvoltage[J]. Transactions of China Electrotechnical Society, 2020, 35(17): 3652-3665.
[15] 梁美, 李艳, 郑琼林, 等. 桥式电路中不同封装SiC MOSFET串扰问题分析及低栅极关断阻抗的驱动电路[J]. 电工技术学报, 2017, 32(18): 162-174.
LIANG M, LI Y, ZHENG Q L, et al.Analysis for crosstalk of SiC MOSFET with different packages in a phase-leg configuration and a low gate turn-off impedance driver[J]. Transactions of China Electrotechnical Society, 2017, 32(18): 162-174.
[16] MENG J, MA W M.Power converter EMI analysis including IGBT nonlinear switching transient model[J]. IEEE transactions on indus-trial electronics, 2006, 53(5): 1577-1583.