OPTOELECTRONIC DESIGN OF HIGH-EFFICIENCY P-TOPCON SOLAR CELLS FEATURING LOCAL P++ CONTACT

Lin Wenjie; Wang Haozheng; Yu Xuegong; Wang Yongqian; Qiu Kaifu

doi:10.19912/j.0254-0096.tynxb.2024-0215

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (6) : 238-244. DOI: 10.19912/j.0254-0096.tynxb.2024-0215

OPTOELECTRONIC DESIGN OF HIGH-EFFICIENCY P-TOPCON SOLAR CELLS FEATURING LOCAL P⁺⁺ CONTACT

Lin Wenjie^1,2, Wang Haozheng^1,2, Yu Xuegong¹, Wang Yongqian², Qiu Kaifu²

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Abstract

This work investigates the effects of the surface morphology and boron diffusion process of boron heavily doped emitter on the passivation properties, contact property and parasitic absorption in the illuminated passivation region and metal contact region, and solar cell performance. Compared with the polished samples, the textured samples show a lower contact resistance of 2.5-3.2 mΩ·cm², allowing a higher efficiency for p-TOPCon solar cells with localized p⁺⁺ contact. By using the boron driving-in-time of 3000 s and the new AgAl contact with a lower contact resistance of 0.5 mΩ·cm², the contact characteristics of the metal contact area, the photoelectric characteristics of the passivated area, and the production cost of the boron diffusion are optimized. The optimized p-TOPCon solar cells achieve an efficiency of 24.62%.

Key words

solar cell / crystalline silicon / optoelectronic design / TOPCon / heavy boron diffusion / local contact / simulated calculation

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Lin Wenjie, Wang Haozheng, Yu Xuegong, Wang Yongqian, Qiu Kaifu. OPTOELECTRONIC DESIGN OF HIGH-EFFICIENCY P-TOPCON SOLAR CELLS FEATURING LOCAL P⁺⁺ CONTACT[J]. Acta Energiae Solaris Sinica. 2025, 46(6): 238-244 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0215

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