MECHANISM OF PRE-SPUTTER LAYER MODULATION OF Cu（In, Ga）Se2 THIN FILM ORIENTATION

Dai Wanlei; Gao Zeran; Sun Yali; Jiang Zhaoyi; Wang Yinglong; Yu Wei

doi:10.19912/j.0254-0096.tynxb.2024-0323

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (1) : 696-703. DOI: 10.19912/j.0254-0096.tynxb.2024-0323

MECHANISM OF PRE-SPUTTER LAYER MODULATION OF Cu（In, Ga）Se₂ THIN FILM ORIENTATION

Dai Wanlei¹, Gao Zeran¹, Sun Yali¹, Jiang Zhaoyi², Wang Yinglong¹, Yu Wei¹

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Abstract

The （220） preferential-oriented CIGS film has a smooth grain surface and can promote the diffusion of Cd or Zn cations, giving CIGS devices better diode characteristics. This thesis uses a high-temperature direct sputtering CIGS quaternary alloy target process to prepare the CIGS absorption layer, by controlling the temperature and thickness of the CIGS pre-sputtering layer, the （220） preferential orientation control mechanism of the CIGS pre-sputtering layer on CIGS thin films prepared by direct sputtering was studied. The results show that when the deposition temperature of the pre-sputtering layer gradually decreases, the X-ray diffraction （XRD） I（220）/I（112） ratio of the CIGS film increases from 0.43 to 1.05, and the grain size gradually becomes larger and more uniform. When the thickness of the pre-sputtering layer increases from 0 nm to 120 nm, the I（220）/I（112） ratio increases from 0.48 to 1.12. When the sputtering temperature was room temperature and the pre-sputtering layer thickness was 80 nm, a single-point device efficiency of 10.94% was finally obtained. Through AFM and XPS testing of the sample surface, we found that the low-temperature pre-sputtering layer can significantly reduce the substrate surface potential, and the amplitude of the voltage is only 25 mV. The lower surface potential promotes the preferential orientation of CIGS （220） deposited at high temperatures while increasing alkali metal doping, ultimately improving CIGS devices'efficiency.

Key words

CIGS / quaternary / sputtering / preferred orientation / surface potential

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Dai Wanlei, Gao Zeran, Sun Yali, Jiang Zhaoyi, Wang Yinglong, Yu Wei. MECHANISM OF PRE-SPUTTER LAYER MODULATION OF Cu（In, Ga）Se₂ THIN FILM ORIENTATION[J]. Acta Energiae Solaris Sinica. 2025, 46(1): 696-703 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0323

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