ANALYSIS OF EFFECTS OF HYDROGEN IMPURITIES IN GRANULAR POLYSILICON ON CZOCHRALSKI-GROWN MONOCRYSTALLINE SILICON AND CONTROL MEASURES

Li Jie; Huang Huyixiong; Zhang Jinbing

doi:10.19912/j.0254-0096.tynxb.2024-0390

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (7) : 568-576. DOI: 10.19912/j.0254-0096.tynxb.2024-0390

Special Topics of Academic Papers at the 87th Annual Meeting of the China Association for Science and Technology

ANALYSIS OF EFFECTS OF HYDROGEN IMPURITIES IN GRANULAR POLYSILICON ON CZOCHRALSKI-GROWN MONOCRYSTALLINE SILICON AND CONTROL MEASURES

Li Jie^1,2, Huang Huyixiong^1,2, Zhang Jinbing²

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Abstract

The silane fluidized bed method utilized in the preparation of granular polysilicon tends to exhibit higher hydrogen impurity content compared to rod silicon by the modified Siemens method, resulting in the occurrence of the “hydrogen jump” phenomenon during the producing of the Czochralski monocrystalline silicon. This phenomenon, in turn, imposes negative impacts on both equipment and products. Both production lines and researchers are constantly searching for suitable methods to remove hydrogen impurities from granular polysilicon to avoid the occurrence of “hydrogen jump” phenomenon, but there are currently few reports on such research. This paper analyzes the potential formation processes of hydrogen impurities in granular polysilicon. It also illustrates the impacts of hydrogen impurities in granular polysilicon on the Czochralski monocrystalline silicon, as well as the corresponding control measures for these impacts. Furthermore, it discusses the challenges and issues of removing hydrogen impurities from granular polysilicon. Finally, recommendations are made for future research directions on hydrogen impurities in granular polysilicon.

Key words

polysilicon / granular materials / dehydrogenation / Czochralski crystal growth / “hydrogen jump” phenomenon

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Li Jie, Huang Huyixiong, Zhang Jinbing. ANALYSIS OF EFFECTS OF HYDROGEN IMPURITIES IN GRANULAR POLYSILICON ON CZOCHRALSKI-GROWN MONOCRYSTALLINE SILICON AND CONTROL MEASURES[J]. Acta Energiae Solaris Sinica. 2025, 46(7): 568-576 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0390

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