THERMODYNAMIC STUDY OF SILICA-CARBON COMPETITIVE DEPOSITION IN CH4Cl2Si-SiHCl3-H2 SYSTEM

Guo Lijie; Yuan Xingping; Zhao Dan; Lyu Qinghui; Xie Gang; Hou Yanqing

doi:10.19912/j.0254-0096.tynxb.2024-0524

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (8) : 327-332. DOI: 10.19912/j.0254-0096.tynxb.2024-0524

THERMODYNAMIC STUDY OF SILICA-CARBON COMPETITIVE DEPOSITION IN CH₄Cl₂Si-SiHCl₃-H₂ SYSTEM

Guo Lijie^1,2, Yuan Xingping¹, Zhao Dan¹, Lyu Qinghui¹, Xie Gang¹, Hou Yanqing^1,2

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Abstract

To investigate the thermodynamic behavior of carbon in chemical vapor deposition process, the equilibrium gas phase components and solid phase products of the CH₄Cl₂Si-SiHCl₃-H₂ system were analyzed. The study also examined the effects of reaction temperature, system pressure, and inlet raw material ratio on silicon carbon deposition behavior.The results indicate that under thermodynamic conditions of 1200 ℃, 0.1 MPa, with a n（H₂）∶n（SiHCl₃）=15∶1, a maximum polysilicon yield of 34.00% can be achieved. Furthermore, favorable thermodynamic conditions for reducing carbon content in polysilicon products include high temperature, high pressure, and an excess amount of H₂ in the intake raw material. Specifically at 1150 ℃ and 0.1 MPa with a n（H₂）∶n（SiHCl₃）=50∶1, it is found that the amount of carbon deposition in polysilicon can be reduced to less than 0.78×10^-9.

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chemical vapor deposition / thermodynamics / polysilicon / carbon atom / product analysis / Si-H-Cl-C system

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Guo Lijie, Yuan Xingping, Zhao Dan, Lyu Qinghui, Xie Gang, Hou Yanqing. THERMODYNAMIC STUDY OF SILICA-CARBON COMPETITIVE DEPOSITION IN CH₄Cl₂Si-SiHCl₃-H₂ SYSTEM[J]. Acta Energiae Solaris Sinica. 2025, 46(8): 327-332 https://doi.org/10.19912/j.0254-0096.tynxb.2024-0524

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