In this work, the optical simulation by Sunsolve and device simulation by Quokka3 are used to investigate the effects of cell structure, film material and film thickness, front contact resistance, wafer resistivity, and front finger pitch on the optical and electrical performance of HJT cells. Compared with the conventional HJT solar cell, the MgFx/Ag back reflector and the thin ITO of 12 nm are used on the back side, improving reflection at long wavelengths and reducing parasitic absorption on the backside. On the front side, the nc-Si： H（n）/ITO contact regions with high parasitic absorption are limited below the fingers, while a highly transparent SiNx/SiOx stack is used in the passivated regions, which significantly reduces the parasitic absorption and external reflection on the front side, and increases the cell JSC by 1.63 mA/cm2, reaching 41.75 mA/cm2. By using the optimized front finger pitch of 1.25 mm, resistivity of 1 Ω·cm, and front ρc of 0.2 mΩ·cm2, localized passivated contact HJT solar cells with an efficiency of 27% are achieved. Compared with conventional HJT solar cells, the efficiency is improved by 0.97%, while the front and back thin ITO design reduces the fabrication cost of HJT cells.
Key words
solar cells /
silicon /
heterojunction /
optoelectronic design /
local contact /
simulated calculation
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