This paper delves into the application of Plasma-Enhanced Chemical Vapor Deposition （PECVD） technology in the fabrication of high-efficiency N-type Tunnel Oxide Passivated Contact （TOPCon） solar cells, focusing on the key process parameters of the tunnel oxide layer and the polycrystalline silicon layer, as well as their impact on the passivation performance of the solar cells. Experimental results indicate that the thickness of the tunnel oxide layer plays a crucial role in passivation. When the oxidation time is controlled at 105 seconds, the passivation effect is optimal. This is mainly because this oxide thickness achieves an optimal balance between carrier tunneling probability and interface passivation effect. Furthermore, annealing temperature is also a key factor affecting passivation performance, with an optimal range of 915-930 ℃. High-temperature annealing not only promotes the activation of phosphorus doping but also reduces interface defects, significantly improving interface quality. The phosphorus doping level in the polycrystalline silicon layer also affects passivation performance. As the phosphorus doping increases, the field passivation effect of the polycrystalline silicon layer improves, thereby enhancing overall passivation performance. However, excessively high phosphorus doping may lead to severe Auger recombination on the silicon surface, weakening the passivation effect. This paper improves the passivation effect of TOPCon cells by precisely controlling the thickness of the tunneling oxide layer and annealing temperature. Additionally, it analyzes the influence of oxidation time and annealing temperature, revealing the complex interactions among various parameters. Ultimately, through in-depth simulation of the key process parameters of TOPCon cells, we revealed high efficiency under optimized conditions, providing scientific evidence and technical support for process improvement and practical applications.
Key words
solar cells /
silicon /
PECVD /
TOPCon /
tunnel oxide layer /
annealing temperature
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References
[1] ABERLE A G, ALTERMATT P P, HEISER G, et al.Limiting loss mechanisms in 23% efficient silicon solar cells[J]. Journal of applied physics, 1995, 77(7): 3491-3504.
[2] 陈红元, 陈涛, 俞健, 等. 整形激光掺杂制备PERC电池选择性发射极研究[J]. 太阳能学报, 2021, 42(2): 383-388.
CHEN H Y, CHEN T, YU J, et al.Study on doping preparing selective emitter of silicon PERC solar cell with shaped laser[J]. Acta energiae solaris sinica, 2021, 42(2): 383-388.
[3] ZHAO J H, WANG A H, GREEN M A.High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates[J]. Solar energy materials and solar cells, 2001, 65(1/2/3/4): 429-435.
[4] WEI H, ZENG Y H, ZHENG J M, et al.Unraveling the passivation mechanisms of c-Si/SiOx/poly-Si contacts[J]. Solar energy materials and solar cells, 2023, 250: 112047.
[5] 贾洁静, 党继东, 辛国军, 等. 多步扩散制备太阳电池pn结工艺的研究[J]. 太阳能学报, 2015, 36(1): 102-107.
JIA J J, DANG J D, XIN G J, et al.On preparing the pn junction of solar cell by means of multi-steps-diffusion[J]. Acta energiae solaris sinica, 2015, 36(1): 102-107.
[6] FELDMANN F, BIVOUR M, REICHEL C, et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J]. Solar energy materials and solar cells, 2014, 120: 270-274.
[7] RICHTER A, HERMLE M, GLUNZ S W.Reassessment of the limiting efficiency for crystalline silicon solar cells[J]. IEEE journal of photovoltaics, 2013, 3(4): 1184-1191.
[8] GREEN M A, DUNLOP E D, YOSHITA M, et al.Solar cell efficiency tables (version 66)[J]. Progress in photovoltaics: research and applications, 2025, 33(7): 795-810.
[9] TRUONG T N, YAN D, NGUYEN C T, et al.Morphology, microstructure, and doping behaviour: a comparison between different deposition methods for poly-Si/SiOx passivating contacts[J]. Progress in photovoltaics: research and applications, 2021, 29(7): 857-868.
[10] STÖHR M, APROJANZ J, BRENDEL R, et al. Firing-stable PECVD SiOxNy/n-poly-Si surface passivation for silicon solar cells[J]. ACS applied energy materials, 2021, 4(5): 4646-4653.
[11] CHEN W H, LIU W Q, YU Y Y, et al.A study of activated phosphorus distribution within silicon substrate for polysilicon passivating contacts based on an in-line PVD system[J]. Solar energy, 2023, 259: 375-380.
[12] ZHOU J C, LV B W, LIANG H L, et al.Simulation and optimization of polysilicon thin film deposition in a 3000 mm tubular LPCVD reactor[J]. Solar energy, 2023, 253: 462-471.
[13] 刘欢, 由甲川, 赵雷, 等. 氢等离子体处理钝化层对高效晶硅异质结太阳电池性能的影响[J]. 太阳能学报, 2022, 43(7): 140-144.
LIU H, YOU J C, ZHAO L, et al.Effect of post-deposition hydrogen plasma treatment to passivation layer on performance of silicon heterojunction solar cell[J]. Acta energiae solaris sinica, 2022, 43(7): 140-144.
[14] KALE A S, NEMETH W, HARVEY S P, et al.Effect of silicon oxide thickness on polysilicon based passivated contacts for high-efficiency crystalline silicon solar cells[J]. Solar energy materials and solar cells, 2018, 185: 270-276.
[15] 叶浩然, 何佳龙, 陈杨, 等. TOPCon太阳电池电子选择性接触研究[J]. 太阳能学报, 2024, 45(2): 475-479.
YE H R, HE J L, CHEN Y, et al.Research on electron selective contact of TOPCon solar cells[J]. Acta energiae solaris sinica, 2024, 45(2): 475-479.
[16] LI S J, HAN P D.Effects of high temperature annealing and laser irradiation on activation rate of phosphorus[J]. Journal of semiconductors, 2020, 41(12): 122701.
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