BONDING WIRE AGING MONITORING METHOD BASED ON COMBINATION OF JUNCTION TEMPERATURE IMMUNITY ELECTRICAL PARAMETERS IN IGBT MODULE

Fan Hechang; Du Mingxing

doi:10.19912/j.0254-0096.tynxb.2024-1193

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Acta Energiae Solaris Sinica ›› 2025, Vol. 46 ›› Issue (11) : 244-250. DOI: 10.19912/j.0254-0096.tynxb.2024-1193

BONDING WIRE AGING MONITORING METHOD BASED ON COMBINATION OF JUNCTION TEMPERATURE IMMUNITY ELECTRICAL PARAMETERS IN IGBT MODULE

Fan Hechang, Du Mingxing

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Abstract

This paper proposes a method for monitoring the internal bond wire aging of IGBT modules based on the combination of junction-temperature-immune electrical parameters. The relationships among the threshold voltage, transconductance, bond wire aging and junction temperature of IGBT modules are investigated. The transconductance of IGBT modules contains information about the aging state of the bond wire and the change of junction temperature. Threshold voltage, one of the best parameters for estimating junction temperature, is not able to assess the bond wire aging state when the measurement time is short and the bond wire breakage does not cause significant junction temperature difference. Using the difference in bond wire aging characterization between the module transconductance and threshold voltage, the influence of temperature differences caused by multiple factors on the monitoring of bond wire aging state under practical operating conditions is eliminated.

Key words

converts insulated gate bipolar transistor（IGBT） / transconductance / threshold voltage / bond wire aging / combination of junction temperature immunity electrical parameters

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Fan Hechang, Du Mingxing. BONDING WIRE AGING MONITORING METHOD BASED ON COMBINATION OF JUNCTION TEMPERATURE IMMUNITY ELECTRICAL PARAMETERS IN IGBT MODULE[J]. Acta Energiae Solaris Sinica. 2025, 46(11): 244-250 https://doi.org/10.19912/j.0254-0096.tynxb.2024-1193

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