INFLUENCE OF SELECTNE EMITTER ON PERFORMANCE OF TOPCon SOLAR CELLS

Zhang Kangping, Sun Ya’nan, Li Jiadong, Xu Xingxing, Liao Dongjin, Huang Zhiping

Acta Energiae Solaris Sinica ›› 2026, Vol. 47 ›› Issue (1) : 48-54.

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Acta Energiae Solaris Sinica ›› 2026, Vol. 47 ›› Issue (1) : 48-54. DOI: 10.19912/j.0254-0096.tynxb.2024-1642

INFLUENCE OF SELECTNE EMITTER ON PERFORMANCE OF TOPCon SOLAR CELLS

  • Zhang Kangping1, Sun Ya’nan1, Li Jiadong1, Xu Xingxing1, Liao Dongjin2, Huang Zhiping1,2
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Abstract

In this study, the effects of laser power on emitter doping, dark saturation current, contact resistivity, and electrical performance were investigated. The findings demonstrate that with an increase in laser power output ratio from 73% to 78%, the overall doping concentration gradually rises within the selective emitter region, resulting in a sheet resistance difference of 145-150 Ω/□ compared to lightly doped regions. Effective minority carrier lifetime, iVoc (implied open-circuit voltage), and contact resistivity significantly decrease with higher impurity concentration overall, while dark saturation current was greatly impacted by surface doping concentration. Consequently, the utilization of a selective emitter can effectively reduce the overall doping concentration and elevate the sheet resistance within the light absorption region, achieving higher minority carrier lifetime and a open-circuit voltage. When the laser power output ratio was adjusted to 75%, a dark saturation current density of 17.68 fA/cm2 and a contact resistivity of 1.34 Ωcm2 were obtained, meanwhile optimum cell performance was achieved: open-circuit voltage of 723.79 mV, fill factor of 84.58%, and power conversion efficiency of 25.51%.

Key words

solar cells / selective emitter / doping concentration / sheet resistance dark saturation current density / contact resistivity / cell performance

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Zhang Kangping, Sun Ya’nan, Li Jiadong, Xu Xingxing, Liao Dongjin, Huang Zhiping. INFLUENCE OF SELECTNE EMITTER ON PERFORMANCE OF TOPCon SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2026, 47(1): 48-54 https://doi.org/10.19912/j.0254-0096.tynxb.2024-1642

References

[1] FELDMANN F, BIVOUR M, REICHEL C, et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J]. Solar energy materials and solar cells, 2014, 120: 270-274.
[2] 叶浩然, 何佳龙, 陈杨, 等. TOPCon太阳电池电子选择性接触研究[J]. 太阳能学报, 2024, 45(2): 475-479.YE H R, HE J L, CHEN Y, et al. Research on electron selective contact of TOPCon solar cells[J]. Acta energiae solaris sinica, 2024, 45(2): 475-479.
[3] 吕欣, 林涛, 董鹏. 背表面掺杂对n型TOPCon电池特性的影响研究[J]. 太阳能学报, 2021, 42(11): 41-45.LYU X, LIN T, DONG P. Influence of back surface doping concentration on n-type TOPCon solar cells[J]. Acta energiae solaris sinica, 2021, 42(11): 41-45.
[4] 白宇, 何佳龙, 李君君, 等. 光电性能可调的TiN薄膜及在TOPCon太阳电池的应用[J]. 太阳能学报, 2023, 44(9): 72-77.BAI Y, HE J L, LI J J, et al. TiN thin film with adjustable photoelectric performance and its application in TOPCon solar cell[J]. Acta energiae solaris sinica, 2023, 44(9): 72-77.
[5] TAO Y G, UPADHYAYA V, CHEN C W, et al.Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency[J]. Progress in photovoltaics: research and applications, 2016, 24(6): 830-835.
[6] MA S, LIAO B, QIAO F Y, et al.24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in situ doped polysilicon[J]. Solar energy materials and solar cells, 2023, 257: 112396.
[7] CHEN D M, CHEN Y F, WANG Z G, et al.24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design[J]. Solar energy materials and solar cells, 2020, 206: 110258.
[8] GREEN M A, DUNLOP E D, HOHL-EBINGER J, et al.Solar cell efficiency tables (version 59)[J]. Progress in photovoltaics: research and applications, 2022, 30(1): 3-12.
[9] SCHMIDT J, PEIBST R, BRENDEL R.Surface passivation of crystalline silicon solar cells: present and future[J]. Solar energy materials and solar cells, 2018, 187: 39-54.
[10] DING D, DU Z R, LIU R L, et al.Laser doping selective emitter with thin borosilicate glass layer for n-type TOPCon c-Si solar cells[J]. Solar energy materials and solar cells, 2023, 253: 112230.
[11] HALLAM B, CHAN C, SUGIANTO A, et al.Deep junction laser doping for contacting buried layers in silicon solar cells[J]. Solar energy materials and solar cells, 2013, 113: 124-134.
[12] TAO Y G, MADANI K, CHO E, et al.High-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells[J]. Applied physics letters, 2017, 110(2): 021101.
[13] TOMIZAWA Y, IKEDA Y, SHIRO T.Development of n-type selective emitter silicon solar cells by laser doping using boron-doped silicon paste[J]. Energy procedia, 2016, 92: 419-426.
[14] HONG J, LIU X, GE J W, et al.Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste[J]. Solar energy, 2022, 247: 115-122.
[15] EBRAHIMI P, KOLAHDOUZ M, NOROUZI M, et al.Selective boron diffusion without masking layer using boric acid for solar cell emitter formation[J]. Journal of materials science: materials in electronics, 2017, 28(15): 10794-10798.
[16] LI X L, WANG Q Q, DONG X, et al.Optimization of efficiency enhancement of TOPCon cells with boron selective emitter[J]. Solar energy materials and solar cells, 2023, 263: 112585.
[17] WANG Q Q, GUO K Y, YUAN L, et al.Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters[J]. Solar energy materials and solar cells, 2023, 253: 112231.
[18] CHENG H, LIU W, LIU Z K, et al.Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells[J]. Solar energy materials and solar cells, 2022, 240: 111713.
[19] HOU C X, JIA R, TAO K, et al.Boron-rich layer removal and surface passivation of boron-doped p-n silicon solar cells[J]. Journal of semiconductors, 2018, 39(12): 122004.
[20] WATKINS G D.Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron[J]. Physical review B, 1975, 12(12): 5824-5839.
[21] CHRISTENSEN J S, RADAMSON H H, KUZNETSOV A Y, et al.Phosphorus and boron diffusion in silicon under equilibrium conditions[J]. Applied physics letters, 2003, 82(14): 2254-2256.
[22] CHARITAT G, MARTINEZ A.Boron segregation at Si-SiO2 interface during neutral anneals[J]. Journal of applied physics, 1984, 55(8): 2869-2873.
[23] ZANUCCOLI M, BRESCIANI P F, FREI M, et al.2-D numerical simulation and modeling of monocrystalline selective emitter solar cells[C]//2010 35th IEEE Photovoltaic Specialists Conference. Honolulu, HI, USA, 2010: 2262-2265.
[24] WEHMEIER N, SCHRAPS G, WAGNER H, et al.Boron-doped pecvd silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication[C]//Proceedings of the 28th European Photovoltaic Solar Energy Conference. Paris, France, 2013.
[25] BOWDEN S, YELUNDUR V, ROHATGI A.Implied-Voc and suns-Voc measurements in multicrystalline solar cells[C]//Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. New Orleans, LA, USA, 2003: 371-374.
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