NUMERICAL SIMULATION AND OPTIMIZATION OF BORON-DOPED POLYSILICON FOR INTERDIGITATED BACK CONTACT SOLAR CELLS

Chu Yu; Li Qianyuan; Liu Yankang; Meng Yang; Zhang Chuanxiang; Tao Haijun

doi:10.19912/j.0254-0096.tynxb.2024-2041

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Acta Energiae Solaris Sinica ›› 2026, Vol. 47 ›› Issue (3) : 747-752. DOI: 10.19912/j.0254-0096.tynxb.2024-2041

NUMERICAL SIMULATION AND OPTIMIZATION OF BORON-DOPED POLYSILICON FOR INTERDIGITATED BACK CONTACT SOLAR CELLS

Chu Yu¹, Li Qianyuan¹, Liu Yankang¹, Meng Yang¹, Zhang Chuanxiang², Tao Haijun¹

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Abstract

Using the Quokka3 simulation software, we systematically analyze the impact of boron-doped polysilicon （p-poly） passivation and contact performance, as well as pattern design, on the performance of interdigitated back contact （IBC） solar cells. On this basis, we further discuss in detail the effects of the tunnel oxide interface recombination rate, the doping concentration of the polysilicon layer, and the diffusion region formed in the silicon substrate on the passivation performance of p-poly, and we outline the essential conditions required to achieve excellent passivation performance with p-poly passivating contacts.

Key words

interdigitated back contact solar cells / boron-doped polycrystalline silicon / numerical simulation / Quokka3 simulation software / passivation performance

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Chu Yu, Li Qianyuan, Liu Yankang, Meng Yang, Zhang Chuanxiang, Tao Haijun. NUMERICAL SIMULATION AND OPTIMIZATION OF BORON-DOPED POLYSILICON FOR INTERDIGITATED BACK CONTACT SOLAR CELLS[J]. Acta Energiae Solaris Sinica. 2026, 47(3): 747-752 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2041

References

[1] LAMMERT M D, SCHWARTZ R J.The interdigitated back contact solar cell: a silicon solar cell for use in concentrated sunlight[J]. IEEE transactions on electron devices, 1977, 24(4): 337-342.
[2] HASCHKE J, DUPRÉ O, BOCCARD M, et al.Silicon heterojunction solar cells: recent technological development and practical aspects-from lab to industry[J]. Solar energy materials and solar cells, 2018, 187: 140-153.
[3] HAASE F, HOLLEMANN C, SCHÄFER S, et al. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells[J]. Solar energy materials and solar cells, 2018, 186: 184-193.
[4] FELDMANN F, BIVOUR M, REICHEL C, et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J]. Solar energy materials and solar cells, 2014, 120: 270-274.
[5] WU H, YE F, YANG M, et al.Silicon heterojunction back-contact solar cells by laser patterning[J]. Nature, 2024, 635(8039): 604-609.
[6] NIEWELT T, STEINHAUSER B, RICHTER A, et al.Reassessment of the intrinsic bulk recombination in crystalline silicon[J]. Solar energy materials and solar cells, 2022, 235: 111467.
[7] SU Q, LIN H, WANG G S, et al.Theoretical limiting-efficiency assessment on advanced crystalline silicon solar cells with Auger ideality factor and wafer thickness modifications[J]. Progress in photovoltaics: research and applications, 2024, 32(9): 587-598.
[8] KRUSE C N, SCHÄFER S, HAASE F, et al. Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells[J]. Scientific reports, 2021, 11: 996.
[9] BASNET R, YAN D, KANG D, et al.Current status and challenges for hole-selective poly-silicon based passivating contacts[J]. Applied physics reviews, 2024, 11: 011311.
[10] BRENDEL R, DREISSIGACKER S, HARDER N P, et al.Theory of analyzing free energy losses in solar cells[J]. Applied physics letters, 2008, 93(17): 173503.
[11] HOLLEMANN C, HAASE F, SCHÄFER S, et al. 26.1%- efficient POLO-IBC cells: quantification of electrical and optical loss mechanisms[J]. Progress in photovoltaics: research and applications, 2019, 27(11): 950-958.
[12] FELL A.A free and fast three-dimensional/two-dimensional solar cell simulator featuring conductive boundary and quasi-neutrality approximations[J]. IEEE transactions on electron devices, 2013, 60(2): 733-738.
[13] FELL A, SCHÖN J, SCHUBERT M C, et al. The concept of skins for silicon solar cell modeling[J]. Solar energy materials and solar cells, 2017, 173: 128-133.
[14] FELL A, FELDMANN F, MESSMER C, et al.Adaption of basic metal-insulator-semiconductor (MIS) theory for passivating contacts within numerical solar cell modeling[J]. IEEE journal of photovoltaics, 2018, 8(6): 1546-1552.
[15] HERMLE M, GRANEK F, SCHULTZ-WITTMANN O, et al.Shading effects in back-junction back-contacted silicon solar cells[C]//2008 33rd IEEE Photovoltaic Specialists Conference. San Diego, CA, USA, 2009: 1-4.
[16] BURGERS A R, CESAR I, GUILLEVIN N, et al.Designing IBC cells with FFE: long range effects with circuit simulation[C]//2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Portland, OR, USA, 2016: 2408-2411.
[17] BURGERS A R, GUILLEVIN N, MEWE A A, et al.FFE IBC cells: impact of busbars on cell performance with circuit modelling[J]. Energy procedia, 2015, 77: 21-28.
[18] LIN H, WANG G S, SU Q, et al.Unveiling the mechanism of attaining high fill factor in silicon solar cells[J]. Progress in photovoltaics: research and applications, 2024, 32(6): 359-371.
[19] FELDMANN F, BIVOUR M, REICHEL C, et al.Tunnel oxide passivated contacts as an alternative to partial rear contacts[J]. Solar energy materials and solar cells, 2014, 131: 46-50.
[20] GLUNZ S W, FELDMANN F.SiO₂ surface passivation layers-a key technology for silicon solar cells[J]. Solar energy materials and solar cells, 2018, 185: 260-269.
[21] 黄嘉斌, 赵增超, 李明, 等. 管式PECVD制备原位掺杂多晶硅的性能研究[J]. 太阳能学报, 2024, 45(6): 334-340.
HUANG J B, ZHAO Z C, LI M, et al.Study on performance of in situ doped polysiliconprepared by tube PECVD[J]. Acta energiae solaris sinica, 2024, 45(6): 334-340.
[22] POLZIN J I, HAMMANN B, NIEWELT T, et al.Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts[J]. Solar energy materials and solar cells, 2021, 230: 111267.
[23] 叶浩然, 何佳龙, 陈杨, 等. TOPCon太阳电池电子选择性接触研究[J]. 太阳能学报, 2024, 45(2): 475-479.
YE H R, HE J L, CHEN Y, et al.Research on electron selective contact of TOPCon solar cells[J]. Acta energiae solaris sinica, 2024, 45(2): 475-479.
[24] 张治, 邹鹏辉, 刘志锋, 等. 发射极掺杂工艺对产业化IBC太阳电池性能的影响[J]. 太阳能学报, 2022, 43(3): 158-162.
ZHANG Z, ZOU P H, LIU Z F, et al.Influence of emitter doping process on performance of industrial IBC solar cell[J]. Acta energiae solaris sinica, 2022, 43(3): 158-162.